Transistor 2SC3929, 2SC3929A Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SA1531 and 2SA1531A Features n 2.1 0.1 l Low noise voltage NV. 0.425 1.25 0.1 0.425 l High foward current transfer ratio h . FE l S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 Absolute Maximum Ratings (Ta=25C) n 2 Parameter Symbol Ratings Unit Collector to 2SC3929 35 V V CBO base voltage 2SC3929A 55 Collector to 2SC3929 35 V V CEO emitter voltage 2SC3929A 55 0.2 0.1 Emitter to base voltage V 5 V EBO Peak collector current I 100 mA CP 1:Base Collector current I 50 mA 2:Emitter EIAJ:SC70 C 3:Collector SMini Type Package Collector power dissipation P 150 mW C Junction temperature T 150 C (2SC3929) j Marking symbol : S (2SC3929A) Storage temperature T 55 ~ +150 C T stg Electrical Characteristics (Ta=25C) n Parameter Symbol Conditions min typ max Unit I V = 10V, I = 0 100 nA CBO CB E Collector cutoff current I V = 10V, I = 0 1 m A CEO CE B Collector to base 2SC3929 35 V I = 10m A, I = 0 V CBO C E voltage 2SC3929A 55 Collector to emitter 2SC3929 35 V I = 2mA, I = 0 V CEO C B voltage 2SC3929A 55 Emitter to base voltage V I = 10m A, I = 0 5 V EBO E C * Forward current transfer ratio h V = 5V, I = 2mA 180 700 FE CE C Collector to emitter saturation voltage V I = 100mA, I = 10mA 0.6 V CE(sat) C B Base to emitter voltage V V = 1V, I = 100mA 0.7 1 V BE CE C V = 10V, I = 1mA, G = 80dB CE C V Noise voltage NV 150 mV R = 100kW , Function = FLAT g Transition frequency f V = 5V, I = 2mA, f = 200MHz 80 MHz T CB E *1 h Rank classification FE1 Rank R S T h 180 ~ 360 260 ~ 520 360 ~ 700 FE 2SC3929 SR SS ST Marking Symbol 2SC3929A TR TS TT 1 2.0 0.2 0.9 0.1 1.3 0.1 0.7 0.1 0.2 0.65 0.65 0 to 0.1 +0.1 +0.1 0.150.05 0.30 Transistor 2SC3929, 2SC3929A P Ta I V I I C C CE C B 240 160 160 Ta=25C V =5V CE Ta=25C 140 140 200 I =350m A B 120 120 300m A 160 100 100 250m A 120 80 80 200m A 60 60 150m A 80 100m A 40 40 40 20 50m A 20 0 0 0 0 20 40 60 80 100 120 140 16001264 8 102000.1 0.2 0.3 0.4.5 Ambient temperature Ta (C) Collector to emitter voltage V (V) Base current I (mA) CE B I V V I h I C BE CE(sat) C FE C 120 100 720 I /I =10 V =5V C B V =5V 25C CE CE 30 100 600 Ta=75C 25C Ta=75C 10 80 480 3 25C 60 1 360 25C 0.3 40 240 Ta=75C 0.1 25C 20 120 0.03 25C 0 0.01 0 020.4 0.8 1.2 1.6.0 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 ( ) ( ) ( ) Base to emitter voltage V V Collector current I mA Collector current I mA BE C C f I C V NV V T E ob CB CE 500 20 160 V =5V CB I =0 E Ta=25C I =1mA C f=1MHz 140 G =80dB V Ta=25C Function=FLAT 400 16 120 R =100kW g 100 300 12 80 200 8 60 22kW 40 4.7kW 100 4 20 0 0 0 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 1 3 10 30 100 Emitter current I (mA) Collector to base voltage V (V) Collector to emitter voltage V (V) E CB CE 2 ( ) ( ) ( ) Transition frequency f MHz Collector current I mA Collector power dissipation P mW T C C Collector output capacitance C (pF) Collector to emitter saturation voltage V (V) Collector current I (mA) ob CE(sat) C Noise voltage NV (mV) Forward current transfer ratio h Collector current I (mA) FE C