X-On Electronics has gained recognition as a prominent supplier of 2SC3526H Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC3526H Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC3526H Panasonic

2SC3526H electronic component of Panasonic
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Part No.2SC3526H
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS NPN 50V 0.15A TO-92L
Datasheet: 2SC3526H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2134 ea
Line Total: USD 1.21 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 1.2134
10 : USD 1.042
100 : USD 0.8822

   
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RoHS - XON
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We are delighted to provide the 2SC3526H from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC3526H and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3526H Silicon NPN epitaxial planar type For display video output Unit: mm 5.90.2 4.90.2 Features High transition frequency f T Small collector output capacitance (Common base, input open cir- 0.70.1 cuited) C ob Wide current range Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit +0.2 0.45 +0.2 0.1 0.45 0.1 Collector-base voltage (Emitter open) V 110 V CBO (1.27) (1.27) Collector-emitter voltage V 100 V 1: Emitter CER 2: Collector (Resistor between B and E) 132 3: Base Collector-emitter voltage (Base open) V 50 V 2.540.15 EIAJ: SC-51 CEO TO-92L-A1 Package Emitter-base voltage (Collector open) V 3.5 V EBO Collector current I 150 mA C Peak collector current I 300 mA CP Collector power dissipation P 1W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 100 A, I = 0 110 V CBO C E (Resistor Collector-emitter voltage V I = 500 A, R = 470 100 V CER C BE between B and E) Collector-emitter voltage (Base open) V I = 1 mA, I = 050 V CEO C B Emitter-base voltage (Collector open) V I = 100 A, I = 0 3.5 V EBO E C Collector-emitter cutoff current (Base open) I V = 35 V, I = 010 A CEO CE B Forward current transfer ratio h V = 5 V, I = 100 mA 20 FE CE C Collector-emitter saturation voltage V I = 150 mA, I = 15 mA 0.5 V CE(sat) C B Transition frequency f V = 10 V, I = 10 mA, f = 200 MHz 300 MHz T1 CB E f V = 10 V, I = 110 mA, f = 200 MHz 350 T2 CB E Collector output capacitance C V = 30 V, I = 0, f = 1 MHz 3 pF ob CB E (Common base, input open circuited) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: February 2003 SJC00133BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3526H P T I V I V C a C CE C BE 1.6 240 120 T = 25C a V = 5 V CE 25C 200 100 I = 5.0 mA B T = 75C a 1.2 4.5 mA 25C 160 80 4.0 mA 3.5 mA 0.8 120 60 3.0 mA 2.5 mA 80 40 2.0 mA 0.4 1.5 mA 40 20 1.0 mA 0.5 mA 0 0 0 0 40 80 120 160 0121486 02010.2 0.4 0.6 0.8.0 Ambient temperature T (C) ( ) Collector-emitter voltage V V Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T E 100 120 600 I / I = 10 C B V = 5 V CE V = 10 V CB T = 25C a 100 500 10 80 400 1 60 300 T = 75C a T = 75C a 25C 25C 40 200 25C 25C 0.1 20 100 0.01 0 0 1 10 100 1 000 0.1 1 10 100 1 10 100 1 000 ( ) Collector current I mA ( ) Collector current I mA Emitter current I (mA) C C E C V ob CB 6 I = 0 E f = 1 MHz T = 25C a 5 4 3 2 1 0 1 10 100 ( ) Collector-base voltage V V CB 2 SJC00133BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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