Ordering number : ENN693F NPN Epitaxial Planar Silicon Transistors High-Friquency General-Purpose 2SC2814 Amplifier Applications Features Package Dimensions Ultrasmall package enabiling compactness and unit:mm slimness of sets. 2018B High f and small c (f =320MHz typ, c =0.95pF T re T re 2SC2814 typ). 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 2.9 1 : Base 2 : Emitter 3 : Collector SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25C Plarameter Ssymbo Csondition Rtating Uni CVollector-to-Base Voltage 3V0 CBO CVollector-to-Emitter Voltage 2V0 CEO EVmitter-to-Base Voltage 5V EBO CIollector Current 3A0 m C CPollector Dissipation 1W50 m C Jjunction Temperature T 125 C Sgtorage Temperature Tst 55 to +125 C Electrical Characteristics at Ta = 25C Ratings Plarameter Ssymbo Condition Unit mpintxy ma CIollector Cutoff Current V =10V, I=10 0A. CBO CB E EImitter Cutoff Current V =4V, I=10 0A. EBO EB C h V =6V, I =1mA DC Current Gain 4*0* 270 FE CE C Gfain-Bandwidth Product V =6V, I =1mA 20003z2 MH T CE C RCeverse Transfer Capacitance V =6V, f=1MHz 05.702.9 1F. p re CB BCase-to-Collector Time Constant rbb V =6V, I=21mA, f=31.9MHz 102sp C CE C NFoise Figure NV =6V, I =1mA, f=100MHz 3B.0 d CE C PGower Gain PV =6V, I =1mA, f=100MHz 2B5 d CE C * : The 2SC2814 are classified as follows by h at 1mA : FE Rank 2345 (Note) Marking : F h 400 to 80600 to 12900 to 18 135 to 27 FE h rank : 2, 3, 4, 5 FE 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Jan-2011, Rev. 0 2SC2814/D 1.5 0.8 0.5 0.5 1.1 2.53V 6V V =12V CE 12V 6V 10A 5A 2SC2814 to 5pF NF, PG Test Circuit to 22pF to 30pF INPUT OUTPUT to 22pF 50 50 to 30pF L1 L2 V V CE BE L1 : 1mm plated wire 10mm 4T, tap : 2T from V side. BE L2 : 1mm plated wire 10mm 7T, tap : 1T from V side. CE L3 : 1mm enameled wire 10mm 3T. I -- V I -- V C CE B BE 5 100 V =6V CE 4 80 3 60 2 40 1 20 I =0 B 0 0 02 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 Collector-to-Emitter Voltage, V V Base-to-Emitter Voltage, V V CE ITR05127 BE ITR05128 h -- I f -- I FE C T C 1000 2 V =6V CE 7 5 1000 3 7 2 5 100 3 7 2 5 3 100 2 7 10 5 23 5 7 23 5 7 23 5 253 7 253 7 253 7 0.1 1.0 10 1.0 10 100 Collector Current, I mA Collector Current, I A ITR05129 C ITR05130 C Cre -- V r Cc -- I CB bb C 5 100 f=1MHz f=31.9MHz 7 3 5 2 3 2 1.0 10 7 V =3V CE 7 5 5 3 3 2 2 23 5 7 23 5 23 5 7 23 5 7 2 1.0 10 0.1 1.0 10 Collector-to-Base Voltage, V V Collector Current, I mA ITR05131 ITR05132 CB C Rev.0 I Page 2 of 5 I www.onsemi.com 20 15 A A 30A 25A Reverse Transfer Capacitance, Cre pF DC Current Gain, h FE Collector Current, I mA C Gain-Bandwidth Product, f MHz Base Current, I A T B Output Capacitance, r Cc ps bb