X-On Electronics has gained recognition as a prominent supplier of 2SC3332T-AA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC3332T-AA Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC3332T-AA ON Semiconductor

2SC3332T-AA electronic component of ON Semiconductor
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See Product Specifications
Part No.2SC3332T-AA
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 160 V 700 mA 120MHz 700 mW Through Hole 3-NP
Datasheet: 2SC3332T-AA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.2051
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5981
10 : USD 0.5107
100 : USD 0.3815
500 : USD 0.2997
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

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Ordering number : EN1334F 2SC3332 Bipolar Transistor 0.5mA 2SC3332 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =120V, I =0A 0.1 A CBO CB E Emitter Cutoff Current I V =4V, I =0A 0.1 A EBO EB C h1V =5V, I =100mA 140* 400* FE CE C DC Current Gain h2V =5V, I =10mA 80 FE CE C Gain-Bandwidth Product f V =10V, I =50mA 120 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 8 pF CB Collector to Emitter Saturation Voltage V (sat) I =250mA, I =25mA 0.12 0.4 V CE C B Base to Emitter Saturation Voltage V (sat) I =250mA, I =25mA 0.85 1.2 V BE C B Collector to Base Breakdown Voltage V I =10A, I =0A 180 V (BR)CBO C E Collector to Emitter Breakdown Voltage V I =1mA, R = 160 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I =10A, I =0A 6 V (BR)EBO E C Turn-ON Time t 50 ns on Storage Time t See speci ed Test Circuit. 1000 ns stg Fall Time t 60 ns f * : The 2SC3332 is classi ed by 100mA h as follows : FE Rank S T h 140 to 280 200 to 400 FE Switching Time Test Circuit I PW=20s B1 OUTPUT D.C.1% R B INPUT R I L B2 V R 333 50 + + 100F 470F --5V 100V I =20I =--20I =300mA C B1 B2 Ordering Information Device Package Shipping memo 2SC3332S NP 500pcs./bag 2SC3332T NP 500pcs./bag Pb Free 2SC3332S-AA NP 1,500pcs./box 2SC3332T-AA NP 1,500pcs./box I -- V I -- V C CE C CE 800 1000 From top Pulse Pulse 100mA 700 90mA 800 80mA 600 70mA 60mA 500 600 400 400 300 200 200 100 0 0 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 60 70 80 Collector to Emitter Voltage, V -- V ITR03219 Collector to Emitter Voltage, V -- V ITR03221 CE CE No.1334-2/5 I =0mA I =0mA B B 20mA 1.0mA 2.5mA 10mA 30mA 1.5mA 2.0mA 40mA 3.5mA 3.0mA 4.0mA 50mA Collector Current, I -- mA C Collector Current, I -- mA C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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