2SC3503/KSC3503 NPN Epitaxial Silicon Transistor March 2008 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor Applications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage : V = 300V CEO Low Reverse Transfer Capacitance : C = 1.8pF at V = 30V TO-126 re CB 1 Excellent Gain Linearity for low THD 1. Emitter 2.Collector 3.Base High Frequency: 150MHz Full thermal and electrical Spice models are available Complement to 2SA1381/KSA1381. Absolute Maximum Ratings* T = 25C unless otherwise noted a Symbol Parameter Ratings Units BV Collector-Base Voltage 300 V CBO BV Collector-Emitter Voltage 300 V CEO BV Emitter-Base Voltage 5 V EBO I Collector Current(DC) 100 mA C I Collector Current(Pulse) 200 mA CP P Total Device Dissipation, T =25C 7 W C C T =125C 1.2 W C T , T Junction and Storage Temperature - 55 ~ +150 C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* T =25C unless otherwise noted a Symbol Parameter Max. Units R Thermal Resistance, Junction to Case 17.8 C/W JC * Device mounted on minimum pad size h Classification FE CD E F Classification h 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 FE 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SC3503/KSC3503 Rev. A1 1 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor Electrical Characteristics* T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 10A, I = 0 300 V CBO C E BV Collecto- Emitter Breakdown Voltage I = 1mA, I = 0 300 V CEO C B BV Emitter-Base Breakdown Voltage I = 10A, I = 0 5 V EBO E C I Collector Cut-off Current V = 200V, I = 0 0.1 A CBO CB E I Emitter Cut-off Current V = 4V, I = 0 0.1 A EBO EB C h DC Current Gain V = 10V, I = 10mA 40 320 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 20mA, I = 2mA 0.6 V CE C B V (sat) Base-Emitter Saturation Voltage I = 20mA, I = 2mA 1 V BE C B f Current Gain Bandwidth Product V = 30V, I = 10mA 150 MHz T CE C C Output Capacitance V = 30V, f = 1MHz 2.6 pF ob CB C Reverse Transfer Capacitance V = 30V, f = 1MHz 1.8 pF re CB * Pulse Test: Pulse Width300s, Duty Cycle2% Ordering Information Part Number* Marking Package Packing Method Remarks 2SC3503CSTU 2SC3503C TO-126 TUBE hFE1 C grade 2SC3503DSTU 2SC3503D TO-126 TUBE hFE1 D grade 2SC3503ESTU 2SC3503E TO-126 TUBE hFE1 E grade 2SC3503FSTU 2SC3503F TO-126 TUBE hFE1 F grade KSC3503CSTU C3503C TO-126 TUBE hFE1 C grade KSC3503DSTU C3503D TO-126 TUBE hFE1 D grade KSC3503ESTU C3503E TO-126 TUBE hFE1 E grade KSC3503FSTU C3503F TO-126 TUBE hFE1 F grade * 1. Affix -S- means the standard TO126 Package.(see package dimensions). If the affix is -STS- instead of -S-, that mean the short-lead TO126 package. 2. Suffix -TU means the tube packing, The Suffix TU could be replaced to other suffix character as packing method. 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SC3503/KSC3503 Rev. A1 2