X-On Electronics has gained recognition as a prominent supplier of 2SC3332S Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC3332S Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC3332S ON Semiconductor

2SC3332S electronic component of ON Semiconductor
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Part No.2SC3332S
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 160 V 700 mA 120MHz 700 mW Through Hole 3-NP
Datasheet: 2SC3332S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.2051
N/A

Obsolete
0
MOQ : 3000
Multiples : 500
3000 : USD 0.2283
N/A

Obsolete
   
Manufacturer
Product Category
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We are delighted to provide the 2SC3332S from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC3332S and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : EN1334F 2SC3332 Bipolar Transistor 0.5mA 2SC3332 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =120V, I =0A 0.1 A CBO CB E Emitter Cutoff Current I V =4V, I =0A 0.1 A EBO EB C h1V =5V, I =100mA 140* 400* FE CE C DC Current Gain h2V =5V, I =10mA 80 FE CE C Gain-Bandwidth Product f V =10V, I =50mA 120 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 8 pF CB Collector to Emitter Saturation Voltage V (sat) I =250mA, I =25mA 0.12 0.4 V CE C B Base to Emitter Saturation Voltage V (sat) I =250mA, I =25mA 0.85 1.2 V BE C B Collector to Base Breakdown Voltage V I =10A, I =0A 180 V (BR)CBO C E Collector to Emitter Breakdown Voltage V I =1mA, R = 160 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I =10A, I =0A 6 V (BR)EBO E C Turn-ON Time t 50 ns on Storage Time t See speci ed Test Circuit. 1000 ns stg Fall Time t 60 ns f * : The 2SC3332 is classi ed by 100mA h as follows : FE Rank S T h 140 to 280 200 to 400 FE Switching Time Test Circuit I PW=20s B1 OUTPUT D.C.1% R B INPUT R I L B2 V R 333 50 + + 100F 470F --5V 100V I =20I =--20I =300mA C B1 B2 Ordering Information Device Package Shipping memo 2SC3332S NP 500pcs./bag 2SC3332T NP 500pcs./bag Pb Free 2SC3332S-AA NP 1,500pcs./box 2SC3332T-AA NP 1,500pcs./box I -- V I -- V C CE C CE 800 1000 From top Pulse Pulse 100mA 700 90mA 800 80mA 600 70mA 60mA 500 600 400 400 300 200 200 100 0 0 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 60 70 80 Collector to Emitter Voltage, V -- V ITR03219 Collector to Emitter Voltage, V -- V ITR03221 CE CE No.1334-2/5 I =0mA I =0mA B B 20mA 1.0mA 2.5mA 10mA 30mA 1.5mA 2.0mA 40mA 3.5mA 3.0mA 4.0mA 50mA Collector Current, I -- mA C Collector Current, I -- mA C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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