Ordering number:ENN1764B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1405/2SC3599 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit:mm Video output. 2009B Color TV chroma output. 2SA1405/2SC3599 Wide-band amp. 8.0 2.7 4.0 Features 3.0 High f : f typ=500MHz. T T High breakdown voltage : V 120V. CEO 1.6 Small reverse transfer capacitance and excellent 0.8 0.8 high-frequnecy characteristic 0.6 0.5 : C =2.5pF (NPN), 3.8pF (PNP). re Complementary pair with the 2SA1405/2SC3599. Adoption of FBET process. 1 : Emitter 12 3 2 : Collector ( ) : 2SA1405 3 : Base 2.4 4.8 SANYO : TO-126 Specifications Absolute Maximum Ratings at Ta = 25C Plarameter Ssymbo Csondition Rtating Uni CVollector-to-Base Voltage (V)120 CBO CVollector-to-Emitter Voltage (V)120 CEO EVmitter-to-Base Voltage (V)4 EBO CIollector Current (A)300 m C CIollector Current (Pulse) (A)600 m CP 1W.2 CPollector Dissipation C Tc=25C 8W Jjunction Temperature T 150 C Sgtorage Temperature Tst 55 to +150 C Electrical Characteristics at Ta = 25C Ratings Plarameter Ssymbo Condition Unit mpintxy ma CIollector Cutoff Current V =()80V, I=10 (A)0. CBO CB E EImitter Cutoff Current V =()2V, I=00 (A)1. EBO EB C h 1V =()10V, I=*()50mA 4*0 320 FE CB C DC Current Gain h 2V =()10V, I=0250mA 2 FE CE C Gfain-Bandwidth Product V =()10V, I=0()50mA 5z0 MH T CE C * : The 2SA1405/2SC3599 are classified by 50mA h as follows : Continued on next page. FE RCank D E F h 400 to 80600 to 121000 to 20 160 to 32 FE Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92502AS (KT)/71598HA (KT)/12696TS (KOTO) X-7233/3237KI/2225MW, TS No.1764-1/4 1.2 1.5 3.0 7.0 15.5 11.02SA1405/2SC3599 Continued from preceding page. Ratings Plarameter Ssymbo Condition Unit mpintxy ma 0V.6 CVollector-to-Emitter Saturation Voltage I =()70mA, I =()7mA CE(sat) C B (V)0.8 BVase-to-Emitter Saturation Voltage I =()70mA, I=0()7mA (V)1. BE(sat) C B CVollector-to-Base Breakdown Voltage I =()10A, I=00 (V)12 (BR)CBO C E CVollector-to-Emitter Breakdown Voltage IC=()1mA, R = (V)120 (BR)CEO BE EVmitter-to-Base Breakdown Votage I =()100A, I=40 (V) (BR)EBO E C 2F.9 p OCutput Capacitance V =()30V, f=1MHz ob CB (F4.3) p 2F.5 p RCeverse Transfer Capacitance V =()30V, f=1MHz re CB (F3.8) p I -- V I -- V C CE C CE --200 200 2SA1405 2SC3599 --160 160 --120 120 80 --80 40 --40 0 0 0 --4 --8 --12 --16 --20 0 48 12 16 20 Collector-to-Emitter Voltage, V V Collector-to-Emitter Voltage, V V CE ITR03462 CE ITR03463 I -- V I -- V C BE C BE --350 350 2SA1405 2SC3599 V = --10V V =10V CE CE 300 --300 250 --250 --200 200 --150 150 --100 100 --50 50 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, V V ITR03464 Base-to-Emitter Voltage, V V ITR03465 BE BE h -- I h -- I FE C FE C 3 3 2SA1405 2SC3599 2 V = --10V 2 V =10V CE CE 100 100 7 7 5 5 3 3 2 2 10 10 7 7 5 5 3 57 2 3 57 253 3557 23 7 2 3 5 --10 --100 10 100 Collector Current, I mA Collector Current, I mA ITR03467 C ITR03466 C No.1764-2/4 1.0mA 0.6mA 0.4mA 0.2mA I =0 B I =0 B 1.6mA 1.4mA --0.4mA --0.2mA 1.8mA 1.2mA 0.8mA --1.0mA --0.6mA --1.6mA --1.4mA --1.2mA --0.8mA --1.8mA --2.0mA 2.0mA Collector Current, I mA DC Current Gain, h C Collector Current, I mA FE C DC Current Gain, h Collector Current, I mA Collector Current, I mA FE C C