2SC15680R Panasonic

This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm +0.5 8.0 0.1 3.20.2 Complementary to 2SA0900 3.160.1 Features Low collector-emitter saturation voltage V CE(sat) Satisfactory operation performances and high efficiency with a low- voltage power supply TO-126B package which incorporates a unique construction en- abling installation to the heat sink without using insulation parts Absolute Maximum Ratings T = 25C a 0.750.1 0.50.1 Parameter Symbol Rating Unit 0.50.1 1.760.1 4.60.2 2.30.2 Collector-base voltage (Emitter open) V 18 V CBO 1: Emitter Collector-emitter voltage (Base open) V 18 V CEO 123 2: Collector 3: Base Emitter-base voltage (Collector open) V 5V EBO TO-126B-A1 Package Collector current I 1A C Peak collector current I 2A CP Collector power dissipation P 1.2 W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 018 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 018 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 05 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 01 A CBO CB E Collector-emitter cutoff current (Base open) I V = 18 V, I = 010 A CEO CE B * Forward current transfer ratio h V = 2 V, I = 500 mA 90 280 FE1 CE C h V = 2 V, I = 1.5 A 50 100 FE2 CE C Collector-emitter saturation voltage V I = 1 A, I = 50 mA 0.5 V CE(sat) C B Base-emitter saturation voltage V I = 500 mA, I = 50 mA 1.2 V BE(sat) C B Transition frequency f V = 6 V, I = 50 mA, f = 200 MHz 150 MHz T CB E Collector output capacitance C V = 6 V, I = 0, f = 1 MHz 12 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q R S h 90 to 155 130 to 210 180 to 280 FE1 Publication date: January 2003 SJD00093BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1568 P T I V I I C a C CE C B 6 1.2 1.2 (1)With a 1001002mm TC=25C VCE=2V Al heat sink TC=25C (2)Without heat sink 5 1.0 1.0 Class B push pull I =5.0mA B 4 0.8 0.8 4.5mA (1) 4.0mA 3.5mA 3 0.6 0.6 3.0mA 2.5mA 2 0.4 0.4 2.0mA 1.5mA (2) 1.0mA 1 0.2 0.2 0.5mA 0 0 0 0 40 80 120 160 200 0 0.4 0.8 1.2 1.6 2.0012148602 Ambient temperature T (C) ( ) Collector-emitter voltage V V Base current I (mA) a CE B V I V I h I CE(sat) C BE(sat) C FE C IC/IB=20 I /I =10 V =2V C B CE 10 1000 10 T =100C C 25C TC=100C 1 1 100 25C 25C 25C TC=100C 25C 25C 0.1 0.1 10 0.01 0.01 1 0.01 0.1 1 0.01 0.1 1 0.01 0.1 1 Collector current I (A) Collector current I (A) Collector current I (A) C C C f I C V I T T E ob CB CBO a 4 10 50 200 V =10V CB IE=0 VCB=6V f=1MHz f=200MHz TC=25C T =25C C 40 3 10 150 30 2 10 100 20 10 50 10 0 1 0 1 10 100 0 40 80 120 160 1 10 100 Collector-base voltage V (V) ( ) Ambient temperature T C Emitter current I (mA) CB a E 2 SJD00093BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.