X-On Electronics has gained recognition as a prominent supplier of 2SC3325-O(TE85L,F) Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC3325-O(TE85L,F) Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC3325-O(TE85L,F) Toshiba

2SC3325-O(TE85L,F) electronic component of Toshiba
2SC3325-O(TE85L,F) Toshiba
2SC3325-O(TE85L,F) Bipolar Transistors - BJT
2SC3325-O(TE85L,F)  Semiconductors

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See Product Specifications
Part No. 2SC3325-O(TE85L,F)
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT S-MINI PLN (LF) TRANSISTOR Pd=200mW F=1MHz
Datasheet: 2SC3325-O(TE85L,F) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4594 ea
Line Total: USD 0.46 
Availability - 8242
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8242
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.4594
10 : USD 0.2756
100 : USD 0.1663
500 : USD 0.112
1000 : USD 0.0866
3000 : USD 0.0728
6000 : USD 0.0658
9000 : USD 0.052
24000 : USD 0.0427

   
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Product Category
RoHS - XON
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We are delighted to provide the 2SC3325-O(TE85L,F) from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC3325-O(TE85L,F) and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC3325 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent h linearity : h = 25 (min) (V = 6 V, I = 400 mA) FE FE (2) CE C High voltage: V = 50 V (min) CEO Complementary to 2SA1313 Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 500 mA C JEDEC TO-236MOD Base current I 50 mA B Collector power dissipation P 200 mW JEITA SC-59 C Junction temperature T 150 C j TOSHIBA 2-3F1A Storage temperature range T 55 to 150 C stg Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Start of commercial production 1982-12 1 2014-03-01 2SC3325 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 50 V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 0.1 A EBO EB C h FE (1) V = 1 V, I = 100 mA 70 240 CE C (Note) DC current gain h FE (2) V = 6 V, I = 400 mA 25 CE C (Note) Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.1 0.25 V CE (sat) C B Base-emitter voltage V V = 1 V, I = 100 mA 0.8 1.0 V BE CE C Transition frequency f V = 6 V, I = 20 mA 300 MHz T CE C Collector output capacitance C V = 6 V, I = 0, f = 1 MHz 7 pF ob CB E Note: h classification O: 70 to 140, Y: 120 to 240 FE (1) h classification O: 25 (min), Y: 40 (min) FE (2) 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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