X-On Electronics has gained recognition as a prominent supplier of 2SB906-Y(TE16L1,NQ Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB906-Y(TE16L1,NQ Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB906-Y(TE16L1,NQ Toshiba

2SB906-Y(TE16L1,NQ electronic component of Toshiba
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Part No.2SB906-Y(TE16L1,NQ
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 60 V 3 A 9MHz 1 W Surface Mount PW-MOLD
Datasheet: 2SB906-Y(TE16L1,NQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1319 ea
Line Total: USD 1.13 
Availability - 1825
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1825
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1319
10 : USD 0.932
25 : USD 0.8559
100 : USD 0.693
250 : USD 0.6838
500 : USD 0.5845
1000 : USD 0.5371
2000 : USD 0.5151

   
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RoHS - XON
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We are delighted to provide the 2SB906-Y(TE16L1,NQ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB906-Y(TE16L1,NQ and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SB906 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) 2SB906 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : V = 1.0 V (typ.) (I = 3 A, I = 0.3 A) CE (sat) C B High power dissipation: P = 20 W (Tc = 25C) C Complementary to 2SD1221 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 60 V CBO Collector-emitter voltage V 60 V CEO Emitter-base voltage V 7 V EBO Collector current I 3 A C Base current I 0.5 A B Ta = 25C 1.0 Collector power P W JEDEC C dissipation Tc = 25C 20 JEITA Junction temperature T 150 C j TOSHIBA 2-7J1A Storage temperature range T 55 to 150 C stg Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1985-11 1 2013-11-01 2SB906 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 60 V, I = 0 100 A CBO CB E Emitter cut-off current I V = 7 V, I = 0 100 A EBO EB C Collector-emitter breakdown voltage V I = 50 mA, I = 0 60 V (BR) CEO C B h FE (1) V = 5 V, I = 0.5 A 60 200 CE C (Note) DC current gain h V = 5 V, I = 3 A 20 FE (2) CE C Collector-emitter saturation voltage V I = 3 A, I = 0.3 A 1.0 1.7 V CE (sat) C B Base-emitter voltage V V = 5 V, I = 0.5 A 1.0 1.5 V BE CE C Transition frequency f V = 5 V, I = 0.5 A 9 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 90 pF ob CB E Turn-on time t 0.4 on OUTPUT I B1 INPUT 20 s I B2 Switching time Storage time t 1.7 s I stg B2 V = 30 V CC Fall time t 0.5 f I = I = 0.2 A, DUTY CYCLE 1% B1 B2 Note: h classification O: 60 to 120, Y: 100 to 200 FE (1) Marking B906 Part No. (or abbreviation code) Lot No. Note 1 Characteristics indicator Note 1: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 I B1 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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