X-On Electronics has gained recognition as a prominent supplier of 2SB1463GRL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1463GRL Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1463GRL Panasonic

2SB1463GRL electronic component of Panasonic
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See Product Specifications
Part No.2SB1463GRL
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 150V 0.05A SSMINI-3
Datasheet: 2SB1463GRL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.3087
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.7088
10 : USD 0.536
25 : USD 0.4894
100 : USD 0.4382
250 : USD 0.4137
500 : USD 0.3982
1000 : USD 0.3848
N/A

Obsolete
0

Multiples : 1
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the 2SB1463GRL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1463GRL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G Features Package High collector-emitter voltage (Base open) V Code CEO Low noise voltage NV SSMini3-F3 SS-Mini type package, allowing downsizing of the equipment and Marking Symbol: I automatic insertion through the tape packing. Pin Name 1. Base 2. Emitter Absolute Maximum Ratings T = 25C a 3. Collector Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 150 V CBO Collector-emitter voltage (Base open) V 150 V CEO Emitter-base voltage (Collector open) V 5V EBO Collector current I 50 mA C Peak collector current I 100 mA CP Collector power dissipation P 125 mW C Junction temperature T 125 C j Storage temperature T 55 to +125 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 100 A, I = 0 150 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C Collector-base cutoff current (Emitter open) I V = 100 V, I = 0 1 A CBO CB E * Forward current transfer ratio h V = 5 V, I = 10 mA 130 330 FE CE C Collector-emitter saturation voltage V I = 30 mA, I = 3 mA 1V CE(sat) C B Transition frequency f V = 10 V, I = 10 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 4 pF ob CB E (Common base, input open circuited) Noise voltage NV V = 10 V, I = 1 mA, G = 80 dB 150 mV CE C V R = 100 k , Function = FLAT g Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R S h 130 to 220 185 to 330 FE Publication date: May 2007 SJC00388AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1463G P T I V I V C a C CE C BE 140 60 50 I = 1.0 mA B V = 5 V CE I / I = 10 C B 0.9 mA 0.8 mA 0.7 mA 120 50 0.5 mA 40 0.4 mA 0.6 mA 0.3 mA 100 40 0.2 mA 25C 30 80 T = 85C a 30 25C 60 20 0.1 mA 20 40 10 10 20 0 0 0 0 80 40 120 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector-base voltage V (V) a CE CB V I h I C V CE(sat) C FE C ob CB 1 350 10 I / I = 10 C B f = 1 MHz V = 5 V CE T = 25C a 300 T = 85C a 250 25C 200 T = 85C a 25C 0.1 1 25C 150 25C 100 50 0 0.01 0.1 0.1 1 10 100 1 10 100 0 10 20 30 40 Collector current I (mA) C Collector current I (mA) Collector-base voltage V (V) C CB 2 SJC00388AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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