This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.50.1 1.60.2 1.50.1 Complementary to 2SD2457 Features Low collector-emitter saturation voltage V CE(sat) 3 12 0.40.04 0.40.08 0.50.08 Mini Power type package, allowing downsizing of the equipment 1.50.1 and automatic insertion through the tape packing and the maga- zine packing. 3 Absolute Maximum Ratings T = 25C a 45 3.00.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 50 V CBO 1: Base Collector-emitter voltage (Base open) V 40 V 2: Collector CEO 3: Emitter Emitter-base voltage (Collector open) V 5V EBO MiniP3-F1 Package Collector current I 1.5 A C Marking Symbol: 1X Peak collector current I 3A CP * Collector power dissipation P 1W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg 2 Note) : Print circuit board: Copper foil area of 1 cm or more, and the board * thickness of 1.7 mm for the collector portion Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 1 mA, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 10 mA, I = 0 40 V CEO C B Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 12 V, I = 0 100 A CEO CE B Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 100 A EBO EB C * Forward current transfer ratio h V = 5 V, I = 1 A 80 220 FE CE C Collector-emitter saturation voltage V I = 1.5 A, I = 0.15 A 0.4 1.0 V CE(sat) C B Base-emitter saturation voltage V I = 2 A, I = 0.2 A 1.5 V BE(sat) C B Transition frequency f V = 5 V, I = 0.5 A, f = 200 MHz 150 MHz T CB E Collector output capacitance C V = 5 V, I = 0, f = 1 MHz 70 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q R h 80 to 160 100 to 220 FE Publication date: December 2002 SJC00095CED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1599 P T I V V I C a C CE CE(sat) C 1.4 4.0 T = 25C C I / I = 10 C B Copper plate at the collector 2 10 I = 40 mA is more than 1 cm in area, B 3.5 1.2 1.7 mm in thickness 35 mA 30 mA 3.0 1.0 25 mA 2.5 1 0.8 20 mA 2.0 15 mA T = 100C a 0.6 1.5 25C 10 mA 0.1 0.4 1.0 25C 5 mA 0.2 0.5 0 0 0.01 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0.01 0.1 1 ( ) Ambient temperature T (C) Collector-emitter voltage V (V) Collector current I A a CE C V I h I f I BE(sat) C FE C T E 240 V = 5 V I / I = 10 V = 5 V CB C B CE f = 50 MHz 10 1000 T = 25C a 200 T = 100C C 25C 25C 160 T = 25C a 25C 1 100 100C 120 80 0.1 10 40 0.01 1 0 0.01 0.1 1 0.01 0.1 1 0.01 0.1 1 10 Collector current I (A) Collector current I (A) Emitter current I (A) C C E C V I T ob CB CEO a 1000 V = 12 V CE I = 0 E 140 f = 1 MHz T = 25C a 120 100 100 80 60 10 40 20 0 1 1 10 100 0 20 40 60 80 100 120 ( ) ( ) Collector-base voltage V V Ambient temperature T C CB a 2 SJC00095CED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.