This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1488 Silicon PNP triple diffusion planar type For power switching Unit: mm 6.90.1 2.50.1 0.7 4.0 (0.8) Features High forward current transfer ratio h FE High-speed switching 0.65 max. High collector-base voltage (Emitter open) V CBO Allowing supply with the radial taping Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 400 V CBO +0.10 +0.10 0.45 0.45 0.05 0.05 1.050.05 Collector-emitter voltage (Base open) V 400 V CEO 2.50.5 2.50.5 Emitter-base voltage (Collector open) V 7V EBO 1: Emitter Collector current I 0.5 A C 2: Collector 123 3: Base Peak collector current I 1A CP MT-2-A1 Package * Collector power dissipation P 1W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg 2 Note) : Print circuit board: Copper foil area of 1 cm or more, and the board * thickness of 1.7 mm for the collector portion Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 1 mA, I = 0 400 V CEO C B Collector-base cutoff current (Emitter open) I V = 400 V, I = 0 1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 100 V, I = 0 1 A CEO CE B Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 1 A EBO EB C * Forward current transfer ratio h V = 5 V, I = 50 mA 80 280 FE1 CE C h V = 5 V, I = 300 mA 10 FE2 CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.25 0.50 V CE(sat) C B Base-emitter saturation voltage V I = 100 mA, I = 10 mA 0.8 1.2 V BE(sat) C B Transition frequency f V = 10 V, I = 0.1 A, f = 200 MHz 25 MHz T CB E Turn-on time t I = 100 mA, R = 1.5 k 0.4 1.0 s on C L Storage time t I = 10 mA, I = 10 mA 5.5 6.5 s stg B1 B2 Fall time t V = 150 V 0.5 1.0 s f CC Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 20 40 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank P Q h 80 to 160 130 to 280 FE1 Publication date: January 2003 SJC00090BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1488 P T I V V I C a C CE CE(sat) C 1.2 1.0 100 I / I = 5 Copper plate at the collector C B T = 25C a 2 is more than 1 cm in area, 1.7 mm in thickness 1.0 0.8 T = 100C 10 a 0.8 25C 0.6 I = 100 mA B 25C 0.6 1 0.4 50 mA 0.4 10 mA 0.1 5 mA 0.2 0.2 1 mA 0.5 mA 0.1 mA 0 0 0.01 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160 0.01 0.1 1 10 Collector-emitter voltage V (V) ( ) Ambient temperature T (C) Collector current I A CE a C V I h I f I BE(sat) C FE C T C 1 000 100 10 000 V = 10 V I / I = 5 V = 5 V CE C B CE T = 25C a 1000 100 10 25C T = 100C a 25C T = 25C 10 1 a 100 25C 100C 10 1 0.1 1 0.1 0.01 0.01 0.1 1 10 0.001 0.01 0.1 1 0.001 0.01 0.1 1 Collector current I (A) Collector current I (A) Collector current I (A) C C C C V t , t , t I ob CB on stg f C 100 100 Pulsed t = 1 ms w I = 0 E Duty cycle = 1% f = 1 MHz I / I = 5 (I = I ) C B B1 B2 T = 25C a V = 100 V CC 80 T = 25C a 10 t stg 60 1 t f 40 t on 0.1 20 0 0.01 1 10 100 0 0.2 0.4 0.6 0.8 1.0 Collector-base voltage V (V) Collector current I (A) CB C 2 SJC00090BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.