This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1504 Silicon PNP epitaxial planar type darlington Unit: mm 7.50.2 4.50.2 For power switching High forward current transfer ratio h FE High-speed switching 0.650.1 0.850.1 Allowing automatic insertion with radial taping 0.8 C 0.8 C 1.00.1 0.70.1 Absolute Maximum Ratings T = 25C a 0.70.1 1.150.2 1.150.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 50 V CBO 0.50.1 0.40.1 Collector-emitter voltage (Base open) V 50 V CEO Emitter-base voltage (Collector open) V 7V EBO 0.8 C 1 23 Collector current I 8A C 1: Emitter Peak collector current I 12 A 2: Collector CP 2.50.2 2.50.2 3: Base Collector power dissipation P 1.5 W C MT-3-A1 Package Junction temperature T 150 C j Internal Connection Storage temperature T 55 to +150 C stg C B E Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 30 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 100 A CBO CB E Emitter-base cutoff current (Collector open) I V = 7 V, I = 0 2mA EBO EB C * Forward current transfer ratio h V = 3 V, I = 4 A 1 000 10 000 FE1 CE C h V = 3 V, I = 8 A 500 FE2 CE C Collector-emitter saturation voltage V I = 4 A, I = 8 mA 1.5 V CE(sat) C B Base-emitter saturation voltage V I = 4 A, I = 8 mA 2.0 V BE(sat) C B Transition frequency f V = 10 V, I = 0.5 A, f = 200 MHz 20 MHz T CB E Turn-on time t I = 4 A, I = 8 mA, I = 8 mA 0.5 s on C B1 B2 Storage time t V = 50 V 2.0 s stg CC Fall time t 1.0 s f Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank P Q R h 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000 FE1 Publication date: April 2003 SJD00080BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1504 P T I V V I C a C CE CE(sat) C 2.0 8 100 IC/IB=500 Without heat sink TC=25C 1.6 IB=2.0mA 1.8mA 6 1.6mA 1.4mA 10 1.2mA 1.2 1.0mA 0.8mA 4 25C 0.6mA 0.8 TC=100C 25C 1 0.4mA 2 0.4 0.2mA 0 0 0.1 0 40 80 120 160 0 1 2 3 4 5 0.1 1 10 Ambient temperature T (C) Collector-emitter voltage V (V) Collector current I (A) a CE C V I h I C V BE(sat) C FE C ob CB 5 4 10 100 10 I /I =500 VCE=3V C B IE=0 f=1MHz T =25C C 3 25C 10 TC=100C 4 10 10 TC=25C 25C 2 10 25C 100C 3 1 10 10 2 0.1 10 1 0.1 1 10 0.1 1 10 0.1 1 10 100 Collector current I (A) Collector current I (A) Collector-base voltage V (V) C C CB Safe operation area R t th 4 100 10 Non repetitive pulse Without heat sink TC=25C 3 10 ICP 10 I C t=1ms 2 10 t=10ms 1 t=300ms 10 0.1 1 1 0.01 10 4 3 2 1 2 3 4 1 10 100 1 000 10 10 10 10 1 10 10 10 10 Collector-emitter voltage V (V) Time t (s) CE 2 SJD00080BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.