This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 7.50.2 4.50.2 Features Low collector-emitter saturation voltage V CE(sat) Large collector current I C 0.650.1 0.850.1 0.8 C 0.8 C Allowing automatic insertion with radial taping 1.00.1 0.70.1 0.70.1 1.150.2 Absolute Maximum Ratings T = 25C a 1.150.2 Parameter Symbol Rating Unit 0.50.1 0.40.1 Collector-base voltage (Emitter open) V 50 V CBO Collector-emitter voltage (Base open) V 50 V CEO 0.8 C 1 23 Emitter-base voltage (Collector open) V 5V EBO 1: Emitter Collector current I 2A C 2: Collector 2.50.2 2.50.2 3: Base Peak collector current I 3A CP MT-3-A1 Package Collector power dissipation P 1.5 W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emiter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 50 V CEO C B Emiter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E * Forward current transfer ratio h V = 2 V, I = 200 mA 120 340 FE1 CE C h V = 2 V, I = 1 A 60 FE2 CE C Collector-emitter saturation voltage V I = 1 A, I = 50 mA 0.2 0.3 V CE(sat) C B Base-emitter saturation voltage V I = 1 A, I = 50 mA 0.85 1.20 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 80 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 45 60 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R S h 120 to 240 170 to 340 FE1 Publication date: March 2003 SJD00074BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1435 P T I V V I C a C CE CE(sat) C 2.0 1.8 10 I /I =20 C B Ta=25C Without heat sink IB=8mA 1.5 1.6 7mA 1 1.2 6mA 1.2 5mA 0.9 0.1 4mA Ta=75C 0.8 3mA 0.6 Ta=25C 2mA Ta=25C 0.01 0.4 0.3 1mA 0 0 0.001 0124 6 80 0 40 80 120 160 1 10 100 1 000 Ambient temperature T (C) Collector-emitter voltage V (V) Collector current I (mA) a CE C V I h I f I BE(sat) C FE C T E 480 100 240 I /I =20 C B V =10V V =5V CB CE f=200MHz T =25C C Ta=75C 400 200 10 25C 320 160 Ta=25C 25C 1 240 120 Ta=75C Ta=25C 160 80 0.1 80 40 0.01 0 0 1 10 100 1 000 1 10 100 1 000 1 10 100 Collector current I (mA) Collector current I (mA) Emitter current I (mA) C C E C V R t ob CB th 4 10 120 Without heat sink f=1MHz IE=0 TC=25C 100 3 10 80 2 10 60 10 40 1 20 1 10 0 4 3 2 1 2 3 4 10 10 10 10 1 10 10 10 10 1 10 100 Time t (s) Collector-base voltage V (V) CB 2 SJD00074BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.