This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.90.1 2.50.1 0.7 4.0 (0.8) Features Low collector-emitter saturation voltage V CE(sat) Large collector-emitter voltage (Base open) V CEO 0.65 max. Allowing supply with the radial taping Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 100 V CBO Collector-emitter voltage (Base open) V 100 V +0.10 +0.10 CEO 0.45 0.45 0.05 0.05 1.050.05 Emitter-base voltage (Collector open) V 5V EBO 2.50.5 2.50.5 Collector current I 2A C 1: Emitter Peak collector current I 3A 2: Collector CP 123 3: Base * Collector power dissipation P 1W C MT-2-A1 Package Junction temperature T 150 C j Storage temperature T 55 to +150 C stg 2 Note) : Print circuit board: Copper foil area of 1 cm or more, and the board * thickness of 1.7 mm for the collector portion Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 100 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 100 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A CBO CB E 2 * Forward current transfer ratio h V = 2 V, I = 200 mA 120 340 FE1 CE C *1 h V = 2 V, I = 1 A 60 FE2 CE C 1 * Collector-emitter saturation voltage V I = 1 A, I = 50 mA 0.17 0.30 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 1 A, I = 50 mA 0.85 1.20 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 90 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 70 90 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank P Q h 120 to 240 170 to 340 FE1 Publication date: January 2003 SJC00084BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1438 P T I V V I C a C CE CE(sat) C 2.0 10 1.2 I / I = 20 C B Copper plate at the collector T = 25C a 2 is more than 1 cm in area, 1.7 mm in thickness 1.0 1.6 1 0.8 I = 8 mA 1.2 B T = 100C a 7 mA 25C 0.1 0.6 6 mA 0.8 5 mA 25C 0.4 4 mA 0.01 3 mA 0.4 0.2 2 mA 1 mA 0 0.001 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0.01 0.1 1 10 Collector-emitter voltage V (V) Collector current I (A) Ambient temperature T (C) CE C a V I h I f I BE(sat) C FE C T E 100 500 200 I / I = 20 V = 10 V C B CB V = 2 V CE T = 25C a 400 160 10 300 120 T = 25C 25C a T = 100C a 1 100C 25C 200 80 25C 0.1 100 40 0 0 0.01 0.01 0.1 1 10 0.01 0.1 1 10 1 10 100 Collector current I (A) Emitter current I (mA) Collector current I (A) C E C C V ob CB 240 I = 0 E f = 1 MHz T = 25C a 200 160 120 80 40 0 1 10 100 ( ) Collector-base voltage V V CB 2 SJC00084BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.