This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.90.1 2.50.1 Complementary to 2SD1994A 0.7 4.0 (0.8) Features Allowing supply with the radial taping 0.65 max. Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 60 V CBO +0.10 +0.10 0.45 0.45 Collector-emitter voltage (Base open) V 50 V 0.05 0.05 CEO 1.050.05 Emitter-base voltage (Collector open) V 5V EBO 2.50.5 2.50.5 Collector current I 1A C 1: Emitter 2: Collector Peak collector current I 1.5 A CP 123 3: Base * Collector power dissipation P 1W MT-2-A1 Package C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg 2 Note) : Print circuit board: Copper foil area of 1 cm or more, and the board * thickness of 1.7 mm for the collector portion Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E 2 * Forward current transfer ratio h V = 10 V, I = 500 mA 85 340 FE1 CE C h V = 5 V, I = 1 A 50 FE2 CE C 1 * Collector-emitter saturation voltage V I = 500 mA, I = 50 mA 0.4 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 500 mA, I = 50 mA 1.2 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 20 30 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank Q R S No-rank h 85 to 170 120 to 240 170 to 340 85 to 340 FE1 Product of no-rank classification is not marked. Publication date: March 2003 SJC00080BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1322A P T I V I I C a C CE C B 1.5 1.2 1.2 Copper plate at the collector T = 25C a V = 10 V CE 2 is more than 1 cm in area, T = 25C C 1.7 mm in thickness. 1.25 I = 10 mA 1.0 B 1.0 9 mA 8 mA 1.0 0.8 0.8 7 mA 6 mA 0.75 0.6 5 mA 0.6 4 mA 0.5 3 mA 0.4 0.4 2 mA 0.25 0.2 0.2 1 mA 0 0 0 0 40 80 120 160 0 2 4 6 8 10 0 2 4 6 8 10 12 ( ) Ambient temperature T (C) Collector-emitter voltage V V Base current I (mA) a CE B V I V I h I CE(sat) C BE(sat) C FE C 100 500 100 I / I = 10 I / I = 10 C B C B V = 10 V CE 400 10 10 300 25C T = 100C T = 25C a a 1 1 100C 25C 200 T = 100C a 25C 25C 25C 0.1 0.1 100 0.01 0.01 0 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 ( ) Collector current I (A) Collector current I A Collector current I (A) C C C f I C V V R T E ob CB CER BE 60 200 120 V = 10 V CB I = 0 E I = 10 mA T = 25C C a f = 1 MHz T = 25C a T = 25C a 50 100 160 40 80 120 30 60 80 20 40 40 10 20 0 0 0 1 10 100 1 10 100 0.1 1 10 100 ( ) Emitter current I (mA) Collector-base voltage V V Base-emitter resistance R (k ) E CB BE 2 SJC00080BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.