This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type darlington Unit: mm For power amplification 10.00.2 5.00.1 Complementary to 2SD2138 and 2SD2138A 1.00.2 Features High forward current transfer ratio h FE High-speed switching 1.20.1 Allowing automatic insertion with radial taping C 1.0 1.480.2 2.250.2 Absolute Maximum Ratings T = 25C C 0.650.1 0.650.1 Parameter Symbol Rating Unit 0.350.1 1.050.1 0.550.1 2SB1418 V 60 V Collector-base voltage CBO 0.550.1 (Emitter open) 2SB1418A 80 2.50.2 2.50.2 2SB1418 V 60 V Collector-emitter voltage CEO 123 1: Base (Base open) 2SB1418A 80 2: Collector Emitter-base voltage (Collector open) V 5V 3: Emitter EBO MT-4-A1 Package Collector current I 2A C Peak collector current I 4A Internal Connection CP Collector power dissipation P 15 W C C T = 25C 2.0 a B Junction temperature T 150 C j Storage temperature T 55 to +150 C stg E Electrical Characteristics T = 25C 3C C Parameter Symbol Conditions Min Typ Max Unit 2SB1418 V I = 30 mA, I = 0 60 V Collector-emitter voltage CEO C B (Base open) 2SB1418A 80 Base-emitter voltage V V = 4 V, I = 2 A 2.8 V BE CE C 2SB1418 I V = 60 V, I = 0 100 A Collector-base cutoff CBO CB E current (Emitter open) 2SB1418A V = 80 V, I = 0 100 CB E 2SB1418 I V = 30 V, I = 0 100 A Collector-emitter cutoff CEO CE B current (Base open) 2SB1418A V = 40 V, I = 0 100 CE B Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 100 A EBO EB C Forward current transfer ratio h V = 4 V, I = 1 A 1 000 FE1 CE C * h V = 4 V, I = 2 A 1 000 10 000 FE2 CE C Collector-emitter saturation voltage V I = 2 A, I = 8 mA 2.5 V CE(sat) C B Transition frequency f V = 10 V, I = 0.5 A, f = 1 MHz 20 MHz T CE C Turn-on time t I = 2 A, I = 8 mA, I = 8 mA 0.2 s on C B1 B2 Turn-off time t V = 50 V 2 s off CC Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R Q P h 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000 FE2 Publication date: March 2003 SJD00073BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1418, 2SB1418A P T I V V I C a C CE CE(sat) C 20 6 100 IC/IB=250 TC=25C (1)TC=Ta (2)Without heat sink (PC=2.0W) 5 1.6mA 25C 15 1.8mA 10 T =100C C 1.4mA 25C 4 1.2mA IB=2.0mA 1.0mA (1) 0.8mA 10 3 1 0.6mA 0.4mA 2 5 0.1 1 0.2mA (2) 0 0 0.01 0 40 80 120 160 0 2 4 6 8 10 12 0.1 1 10 100 Ambient temperature T (C) Collector-emitter voltage V (V) Collector current I (A) a CE C I V h I C V C BE FE C ob CB 5 6 1 000 10 VCE=4V IE=0 V =4V CE f=1MHz TC=25C 5 25C T =100C C 4 10 100 4 T =100C C 25C 3 3 10 25C 10 2 2 10 25C 1 1 0 10 1 10 100 0 1 2 3 4 0.01 0.1 1 10 Collector-base voltage V (V) Base-emitter voltage V (V) Collector current I (A) CB BE C Safe operation area R t th 4 10 100 Non repetitive pulse Note: R was measured at Ta=25C and under natural convection. th T =25C C (1)Without heat sink (2)With a 50502mm Al heat sink 3 10 10 I CP 2 10 (1) I t=1ms C (2) 1 t=10ms 10 DC 0.1 1 1 10 0.01 4 3 2 1 2 3 4 1 10 100 1 000 10 10 10 10 1 10 10 10 10 Time t (s) Collector-emitter voltage V (V) CE 2 SJD00073BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.