This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 7.50.2 4.50.2 Complementary to 2SD2136 Features High forward current transfer ratio h which has satisfactory FE 0.650.1 0.850.1 0.8 C 0.8 C 1.00.1 linearity Low collector-emitter saturation voltage V CE(sat) 0.70.1 Allowing automatic insertion with radial taping 0.70.1 1.150.2 1.150.2 Absolute Maximum Ratings T = 25C a 0.50.1 0.40.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 60 V CBO 0.8 C 1 23 Collector-emitter voltage (Base open) V 60 V CEO 1: Emitter Emitter-base voltage (Collector open) V 5V 2: Collector EBO 2.50.2 2.50.2 3: Base Collector current I 3A C MT-3-A1 Package Peak collector current I 5A CP Collector power dissipation P 1.5 W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 30 mA, I = 0 60 V CEO C B Base-emitter voltage V V = 4 V, I = 3 A 1.8 V BE CE C Collector-emitter cutoff current (E-B short) I V = 60 V, V = 0 200 A CES CE BE Collector-emitter cutoff current (Base open) I V = 30 V, I = 0 300 A CEO CE B Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 1mA EBO EB C * Forward current transfer ratio h V = 4 V, I = 1 A 40 250 FE1 CE C h V = 4 V, I = 3 A 10 FE2 CE C Collector-emitter saturation voltage V I = 3 A, I = 0.375A 1.2 V CE(sat) C B Transition frequency f V = 5 V, I = 0.1 A, f = 200 MHz 270 MHz T CB E Turn-on time t 0.5 s I = 1 A, I = 0.1 A, I = 0.1 A on C B1 B2 Storage time t 1.2 s stg Fall time t 0.3 s f Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank P Q R h 40 to 90 70 to 150 120 to 250 FE1 Publication date: March 2003 SJD00071BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1416 P T I V I V C a C CE C BE 2.0 1.2 1.2 Ta=25C VCE=4V Without heat sink 25C I =8mA B 1.0 1.0 1.6 Ta=75C 25C 7mA 0.8 0.8 6mA 1.2 5mA 0.6 0.6 4mA 0.8 0.4 0.4 3mA 2mA 0.4 0.2 0.2 1mA 0 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 40 80 120 160 0 2 4 6 8 10 12 Ambient temperature T (C) Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T E 10 300 240 IC/IB=8 V =5V CB VCE=4V f=200MHz T =25C C 250 200 Ta=75C 1 200 160 25C 150 0.1 120 25C Ta=75C Ta=25C 100 80 Ta=25C 0.01 50 40 0 0.001 0 0.01 0.1 1 10 1 10 100 1 000 1 10 100 1 000 Collector current I (A) Collector current I (A) Collector current I (A) C C C Safe operation area R t th 4 100 10 Single pulse Without heat sink TC=25C 3 10 10 I CP 2 10 I C t=1ms t=10ms 1 DC 10 0.1 1 1 0.01 10 4 3 2 1 2 3 4 0.1 1 10 100 10 10 10 10 1 10 10 10 10 Collector-emitter voltage V (V) Time t (s) CE 2 SJD00071BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.