This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Unit: mm Complementary to 2SD2137A 10.00.2 5.00.1 1.00.2 Features High forward current transfer ratio h which has satisfactory FE linearity 1.20.1 C 1.0 Low collector-emitter saturation voltage V CE(sat) 1.480.2 2.250.2 Allowing automatic insertion with radial taping 0.650.1 0.650.1 0.350.1 Absolute Maximum Ratings T = 25C a 1.050.1 0.550.1 0.550.1 Parameter Symbol Rating Unit 2.50.2 2.50.2 Collector-base voltage (Emitter open) V 80 V CBO 123 Collector-emitter voltage (Base open) V 80 V CEO 1: Base Emitter-base voltage (Collector open) V 6V 2: Collector EBO 3: Emitter Collector current I 3A C MT-4-A1 Package Peak collector current I 5A CP T = 25CP 15 W Collector power C C dissipation 2.0 Junction temperature T 150 C j Storage temperature T 55 +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 30 mA, I = 0 80 V CEO C B Base-emitter voltage V V = 4 V, I = 3 A 1.8 V BE CE C Collector-emitter cutoff current (E-B short) I V = 80 V, V = 0 100 A CES CE BE Collector-emitter cutoff current (Base open) I V = 60 V, I = 0 100 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 100 A EBO EB C * Forward current transfer ratio h V = 4 V, I = 1 A 70 250 FE1 CE C h V = 4 V, I = 3 A 10 FE2 CE C Collector-emitter saturation voltage V I = 3 A, I = 0.375A 1.2 V CE(sat) C B Transition frequency f V = 5 V, I = 0.2 A, f = 10 MHz 30 MHz T CE C Turn-on time t 0.3 s I = 1 A, I = 0.1 A, I = 0.1 A on C B1 B2 Storage time t V = 50 V 1.0 s stg CC Fall time t 0.2 s f Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q P h 70 to 150 120 to 250 FE1 Publication date: March 2003 SJD00072BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1417A P T I V V I C a C CE CE(sat) C 20 6 100 IC/IB=8 T =25C C (1)TC=Ta (2)Without heat sink 5 (P =2.0W) C IB=100mA 90mA 15 80mA 10 70mA 4 60mA 50mA (1) 40mA 10 3 1 30mA TC=25C 20mA 2 100C 5 0.1 10mA 1 25C (2) 0 0 0.01 0 2 4 6 8 10 12 0 40 80 120 160 0.1 1 10 100 Collector-emitter voltage V (V) Ambient temperature T (C) Collector current I (A) CE a C I V h I f I C BE FE C T E 4 5 6 10 10 VCE=4V V =5V VCE=4V CE f=10MHz TC=25C 5 3 4 10 10 4 TC=100C 2 3 3 10 10 25C T =100C C 2 25C 2 10 10 25C 1 25C 0 1 10 0 0.4 0.8 1.2 1.6 2.0 0.01 0.1 1 10 0.01 0.1 1 10 Base-emitter voltage V (V) Collector current I (A) BE Collector current I (A) C C C V t , t , t I Safe operation area ob CB on stg f C 1 000 100 100 Pulsed t =1ms Non repetitive pulse I =0 w E T =25C Duty cycle=1% C f=1MHz IC/IB=5 TC=25C (I =I ) B1 B2 VCC=200V 10 10 T =25C C ICP 100 I C t=1ms t=10ms tstg 1 1 DC ton 10 0.1 0.1 tf 1 0.01 0.01 1 10 100 0 1 2 3 4 1 10 100 1 000 Collector-base voltage V (V) Collector current I (A) Collector-emitter voltage V (V) CB C CE 2 SJD00072BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.