This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1398 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.90.1 2.50.1 0.7 4.0 (0.8) Features Low collector-emitter saturation voltage V CE(sat) Large collector current I C 0.65 max. Allowing supply with the radial taping Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 30 V CBO Collector-emitter voltage (Base open) V 25 V +0.10 +0.10 CEO 0.45 0.45 0.05 0.05 1.050.05 Emitter-base voltage (Collector open) V 7V EBO 2.50.5 2.50.5 Collector current I 5A C 1: Emitter Peak collector current I 8A 2: Collector CP 123 3: Base * Collector power dissipation P 1W C MT-2-A1 Package Junction temperature T 150 C j Storage temperature T 55 to +150 C stg 2 Note) : Print circuit board: Copper foil area of 1 cm or more, and the board * thickness of 1.7 mm for the collector portion Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 1 mA, I = 0 25 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 100 nA CBO CB E Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 100 nA EBO EB C 1, 2 * Forward current transfer ratio h V = 2 V, I = 2 A 90 205 FE CE C *1 Collector-emitter saturation voltage V I = 3 A, I = 0.1 A 1V CE(sat) C B Transition frequency f V = 6 V, I = 50 mA, f = 200 MHz 120 MHz T CB E Collector output capacitance C V = 20 V, I = 0, f = 1 MHz 85 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank P Q h 90 to 135 120 to 205 FE Publication date: January 2003 SJC00082BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1398 P T I V I V C a C CE C BE 10 1.2 6 Copper plate at the collector T = 25C a V = 2 V CE 2 is more than 1 cm in area, 1.7 mm in thickness I = 50 mA B 45 mA 1.0 5 40 mA 8 35 mA 25C 30 mA 0.8 4 T = 100C 25C a 6 25 mA 0.6 20 mA 3 15 mA 4 0.4 2 10 mA 2 0.2 5 mA 1 0 0 0 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature T (C) Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE h I V I f I FE C CE(sat) C T E 100 240 500 I / I = 30 C B V = 2 V V = 6 V CE CB T = 25C a 200 400 10 160 300 T = 100C a 1 120 T = 100C a 25C 25C 200 80 25C 25C 0.1 100 40 0.01 0 0 0.01 0.1 1 10 1 10 100 1 000 0.01 0.1 1 10 Collector current I (A) Emitter current I (mA) Collector current I (A) C E C C V ob CB 240 I = 0 E f = 1 MHz T = 25C a 200 160 120 80 40 0 1 10 100 Collector-base voltage V (V) CB 2 SJC00082BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.