X-On Electronics has gained recognition as a prominent supplier of 2SB1257 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2SB1257 Darlington Transistors are a product manufactured by Sanken. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

2SB1257 Sanken

2SB1257 electronic component of Sanken
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See Product Specifications
Part No.2SB1257
Manufacturer: Sanken
Category: Darlington Transistors
Description: Bipolar (BJT) Transistor PNP - Darlington 60 V 4 A 150MHz 25 W Through Hole TO-220F
Datasheet: 2SB1257 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.0559 ea
Line Total: USD 5.06

Availability - 38
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
35
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 4.9003
3 : USD 4.4089
5 : USD 3.7401
13 : USD 3.5353
50 : USD 3.508

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the 2SB1257 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1257 and other electronic components in the Darlington Transistors category and beyond.

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1ms With Infinite heatsink 10ms DC 100x2 Typ 0.8mA E (2k)(650) B Darlington 2SB1257 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) Application : Driver for Solenoid, Relay and Motor and General Purpose External Dimensions FM20(TO220F) n Absolute maximum ratings (Ta=25C) n Electrical Characteristics (Ta=25C) Symbol Ratings Unit Symbol Conditions Ratings Unit 5.50.2 15.60.2 3.45 0.2 VCBO 60 ICBO VCB=60V 10max V m A VCEO 60 V IEBO VEB=6V 10max m A VEBO 6 V(BR)CEO IC=10mA 60min V V 3.30.2 IC hFE 2000min 4(Pulse6) A VCE=4V, IC=3A a b IB 1 VCE(sat) IC=3A, IB=6mA 1.5max V A PC VBE(sat) IC=3A, IB=6mA 2max 25(Tc=25C) W V 1.75 0.8 Tj 150 fT VCE=12V, IE=0.2A 150typ MHz C 2.15 Tstg COB VCB=10V, f=1MHz 75typ +0.2 55 to +150 C pF 1.05 -0.1 +0.2 5.450.1 5.450.1 0.65 -0.1 3.35 n Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5 Weight : Approx 2.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) () (A) (V) (V) (mA) (mA) (m s) (m s) (m s) a. Part No. BEC b. Lot No. 30 10 3 10 5 10 10 0.4typ 0.8typ 0.6typ I CVCE Characteristics (Typical) VCE(sat)IB Characteristics (Typical) I CVBE Temperature Characteristics (Typical) (VCE=2V) 6 3 4 5 3 4 2 3 2 3A 2 1 2A I C=1A 1 1 0 0.6 0 0 1 2 3 4 5 6 0.2 0.5 1 5 10 50 0 1 2 2.2 Collector-Emitter Voltage VCE(V) Base Current I B(mA) Base-Emittor Voltage VBE(V) hFE IC Characteristics (Typical) hFE IC Temperature Characteristics (Typical) j-a t Characteristics (VCE=2V) (VCE=2V) 5 8000 8000 5000 5000 1000 1000 500 500 100 100 1 50 50 20 20 0.7 0.02 0.1 0.5 1 56 0.02 0.05 0.1 0.5 1 5 6 1 10 100 1000 Collector Current I C(A) Collector Current I C(A) Time t(ms) f T IE Characteristics (Typical) Safe Operating Area (Single Pulse) Pc Ta Derating (VCE=12V) 240 10 25 Natural Cooling Silicone Grease Heatsink: Aluminum 5 200 in mm 20 160 1 120 100x 0.5 10 80 Without Heatsink Natural Cooling 40 Without Heatsink 0.1 2 0.07 0 0 3 5 10 70 0.05 0.1 0.5 1 4 0 25 50 75 100 125 150 Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(C) Emitter Current I E(A) 39 Typ 150x150x2 50x50x2 1.0mA 1.2mA 1.5mA 1.8mA 30C 25C 125C I B=2.3mA 125C (Case Temp) 25C (Case Temp) 30C (Case Temp) DC Current Gain hFE Cut-off Frequency f T(MH Z) Collector Current I C(A) DC Current Gain hFE Collector Current I C(A) Collector-Emitter Saturation Voltage VCE(sat)(V) Transient Thermal Resistance j-a(C/W) Maximum Power Dissipation P C(W) Collector Current I C(A) 0.3 16.2 23.0 9.50.2 1.6 0.80.2 3.3 5.5 3.0X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Sanken manufacturer: Other Similar products are found below : SWF240P-36 HWB030D-15 HWB015S-15 FMX-G12S SCM1561M SWF100P-36 SWF100P-48 SWG050-24 FMG-G26S C650H SMA6863MZ-LF2451 SCM3615C11 STR-A6062HD SWG150-24 HWB060S-24 C150S03 SWC050-12 PTS162M1212 SWG100-05 HWB060S-12 HWB030S-05 SWC100-24 SWG150-12 SWG030-05 C300H HWB030S-15 SWG050-12 C130X24 HWB060S-05 HWB030S-05-C C450H SWG050-05 HWB060S-12-RM-C HWB060S-15 SWC050-24 TMA56S-L SMA7029M SLA6816MZLF2151 HWB030S-15-M-C SMA6864MZ-LF2451 SMA6861MZ-LF2451 SCM1245MF SMA6862MZ-LF2451 SWF240P-48 SWG100-12 BR201 STR-W6753 SWG150-05 BR206 2SC4024

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Sanken Electric
Sanken Electric Company, Ltd.

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