X-On Electronics has gained recognition as a prominent supplier of 2SB1383 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2SB1383 Darlington Transistors are a product manufactured by Sanken. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

2SB1383 Sanken

2SB1383 electronic component of Sanken
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Part No.2SB1383
Manufacturer: Sanken
Category: Darlington Transistors
Description: Bipolar (BJT) Transistor PNP - Darlington 120 V 25 A 50MHz 120 W Through Hole TO-3P
Datasheet: 2SB1383 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.0182 ea
Line Total: USD 7.02 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 7.0182

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 8.6798
3 : USD 6.3725
7 : USD 6.0247
25 : USD 5.9686

   
Manufacturer
Product Category
Kind Of Transistor
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Frequency
Power Dissipation
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We are delighted to provide the 2SB1383 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1383 and other electronic components in the Darlington Transistors category and beyond.

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1ms With Infinite heatsink 10ms DC Typ 1.5mA 1.0mA IB=0.6mA (2k) (80) E B Darlington 2SB1383 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) Application : Chopper Regulator, DC Motor Driver and General Purpose External Dimensions MT-100(TO3P) n Absolute maximum ratings (Ta=25C) n Electrical Characteristics (Ta=25C) Symbol Ratings Conditions Ratings Unit Symbol Unit 0.2 4.8 15.60.4 120 2.00.1 VCBO V ICBO VCB=120V 10max m A 9.6 VCEO 120 IEBO VEB=6V 10max mA V VEBO 6 120min V V(BR)CEO IC=25mA V a 0.1 3.2 IC 25(Pulse40) hFE VCE=4V, IC=12A 2000min A b IB 2 IC=12A, IB=24mA 1.8max A VCE(sat) V PC 120(Tc=25C) VBE(sat) IC=12A, IB=24mA 2.5max V W 2 Tj 150 fT VCE=12V, IE=1A 50typ MHz C 3 +0.2 +0.2 Tstg 230typ 55 to +150 COB VCB=10V, f=1MHz pF 1.05 0.65 C -0.1 -0.1 5.450.1 5.450.1 1.4 n Typical Switching Characteristics (Common Emitter) BEC VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g (V) () (A) (V) (V) (mA) (mA) (m s) (m s) (m s) a. Part No. 24 2 12 10 5 24 24 1.0typ 3.0typ 1.0typ b. Lot No. I CVCE Characteristics (Typical) VCE(sat)IB Characteristics (Typical) I CVBE Temperature Characteristics (Typical) (VCE=4V) 25 3 25 20 20 I C=25A 2 15 15 12A 10 10 1 6A 5 5 0 0 0 0 1 2 3 4 5 6 0.5 1 10 100 500 0 1 2 2.6 Collector-Emitter Voltage VCE(V) Base Current I B(mA) Base-Emittor Voltage VBE(V) hFE IC Characteristics (Typical) hFE IC Temperature Characteristics (Typical) j-a t Characteristics (VCE=4V) (VCE=4V) 2 20000 20000 10000 10000 1 5000 5000 0.5 1000 1000 500 500 200 200 0.1 0.2 0.5 1 5 10 40 0.2 0.5 1 5 10 40 1 10 100 1000 Collector Current I C(A) Collector Current I C(A) Time t(ms) f T IE Characteristics (Typical) Safe Operating Area (Single Pulse) Pc Ta Derating (VCE=12V) 120 60 100 50 50 100 40 10 5 30 50 20 1 10 Without Heatsink 0.5 Natural Cooling Without Heatsink 3.5 0.2 0 0 3 5 10 50 100 200 0.1 0.5 1 5 10 0 25 50 75 100 125 150 Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(C) Emitter Current I E(A) 45 Typ 2.5mA 4.0mA 6.0mA 30C 25C 125C 8.0mA 125C (Case Temp) 25C (Case Temp) 30C (Case Temp) DC Current Gain hFE Collector Current I C(A) Cut-off Frequency f T(MH Z) DC Current Gain hFE Collector Current I C(A) Collector-Emitter Saturation Voltage VCE(sat)(V) Transient Thermal Resistance j-a(C/W) Maximum Power Dissipation P C(W) Collector Current I C(A) 20.0min 19.90.3 4.0max 4.0 2.0 1.8 5.00.2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Sanken Electric
Sanken Electric Company, Ltd.
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