With Infinite heatsink 10ms 100ms DC Typ IB=0.4mA (70) E B Darlington 2SB1560 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Application : Audio, Series Regulator and General Purpose External Dimensions MT-100(TO3P) n Absolute maximum ratings (Ta=25C) n Electrical Characteristics (Ta=25C) Symbol Ratings Conditions Ratings Unit Symbol Unit 0.2 0.4 4.8 15.6 160 VCBO V ICBO VCB=160V 100max m A 9.6 2.00.1 VCEO 150 IEBO VEB=5V 100max m A V 5 VEBO V V(BR)CEO IC=30mA 150min V a 0.1 IC 10 hFE VCE=4V, IC=7A 5000min* 3.2 A b IB 1 IC=7A, IB=7mA 2.5max A VCE(sat) V PC 100(Tc=25C) VBE(sat) IC=7A, IB=7mA 3.0max V W 2 Tj 150 fr VCE=12V, IE=2A 50typ MHz C 3 Tstg 55 to +150 COB VCB=10V, f=1MHz 230typ pF C +0.2 +0.2 1.05 -0.1 0.65 -0.1 * hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000) 5.450.1 5.450.1 1.4 n Typical Switching Characteristics (Common Emitter) BEC VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g (V) () (A) (V) (V) (mA) (mA) (m s) (m s) (m s) a. Part No. 70 10 7 10 5 7 7 0.8typ 3.0typ 1.2typ b. Lot No. I C VCE Characteristics (Typical) VCE(sat) IB Characteristics (Typical) I C VBE Temperature Characteristics (Typical) (VCE=4V) 10 3 10 8 8 2 6 6 10A 7A 4 4 I C=5A 1 2 2 0 0 0 0 2 4 6 0.2 0.5 1 5 10 50 100 200 0 1 2 2.5 Collector-Emitter Voltage VCE(V) Base Current I B(mA) Base-Emittor Voltage VBE(V) hFE IC Characteristics (Typical) hFE IC Temperature Characteristics (Typical) j-a t Characteristics (VCE=4V) (VCE=4V) 40,000 50000 3 125C 1 10000 25C 10,000 5000 30C 0.5 5,000 1000 1,000 500 0.1 0.2 0.5 1 5 10 1 5 10 50 100 500 1000 2000 0.2 0.5 1 5 10 Time t(ms) Collector Current I C(A) Collector Current I C(A) f TIE Characteristics (Typical) Safe Operating Area (Single Pulse) PcTa Derating (VCE=12V) 100 100 30 10 80 5 60 50 1 40 0.5 Without Heatsink 20 Natural Cooling 0.1 Without Heatsink 3.5 0 0.05 0 0.02 0.05 0.1 0.5 1 5 10 3 5 10 50 100 200 0 25 50 75 100 125 150 Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(C) Emitter Current I E(A) 48 Typ 0.8mA 0.6mA 1.0mA 1.2mA 1.5mA 2.0mA 2.5mA 10mA 125C (Case Temp) 25C (Case Temp) 30C (Case Temp) DC Current Gain hFE Cut-off Frequency f T(MH Z) Collector Current I C(A) DC Current Gain hFE Collector Current I C(A) Collector-Emitter Saturation Voltage VCE(sat)(V) Transient Thermal Resistance j-a(C/W) Maximum Power Dissipation P C(W) Collector Current I C(A) 20.0min 19.90.3 4.0max 4.0 2.0 1.8 0.2 5.0X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Darlington Transistors category: Click to view products by Sanken manufacturer: Other Similar products are found below : 281287X SMMBT6427LT1G 2N7371 BDV64B JANTXV2N6287 028710A SMMBTA64LT1G 2N6350 2SB1214-TL-E SMMBTA14LT1G SBSP52T1G NJVMJD117T4G Jantx2N6058 2N6353 LB1205-L-E 500-00005 2N6053 NJVMJD112G Jan2N6350 Jantx2N6352 Jantx2N6350 BULN2803LVS ULN2001N 2SB1383 2SB1560 2SB852KT146B TIP112TU TIP122TU BCV27 MMBTA13- TP MMBTA14-TP MMSTA28T146 BSP50H6327XTSA1 KSH122TF NTE2557 NJVNJD35N04T4G TIP115 MPSA29-D26Z MJD127T4 FJB102TM BCV26E6327HTSA1 BCV46E6327HTSA1 BCV47E6327HTSA1 BSP61H6327XTSA1 BU941ZPFI 2SB1316TL 2SD1980TL NTE2350 NTE245 NTE246