2SB852K Datasheet High-gain Amplifier Transistor (-32V, -300mA) llOutline SOT-346 Parameter Value SC-59 V -32V CES I -0.3A C R 4k SMT3 llFeatures llInner circuit 1)Darlington connection for high DC current gain. 2)Built-in 4K resistor between base and emitter. 3)Complements the 2SD1383K. llApplication HIGH GAIN AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 2SB852K 2928 T146 180 8 3000 U (SMT3) www.rohm.com 1/6 20160208 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. 2SB852K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V -40 V CBO V Collector-emitter voltage -32 V CES Emitter-base voltage V -6 V EBO I -0.3 A C Collector current *1 I -1.5 A CP *2 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -40 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA, R = 0 -32 - - V CES C BE voltage BV I = -100A Emitter-base breakdown voltage -6 - - V EBO E I Collector cut-off current V = -24V - - -1 A CBO CB I Emitter cut-off current V = -4.5V - - -1 A EBO EB *3 Collector-emitter saturation voltage I = -200mA, I = -0.4mA V - - -1.5 V C B CE(sat) *3 DC current gain V = -5V, I = -100mA 1k - - - h CE C FE V = -5V, I = 10mA, CE E *4 Transition frequency f - 200 - MHz T f = 100MHz V = -10V, I = 0mA, CB E C Output capacitance - 3.0 - pF ob f = 1MHz hFE values are calssified as follows : rank A B - - - h 1k- 5k- - - - FE *1 Pw=10ms,duty=1/15 *2 Each terminal mounted on a reference land *3 Pulsed *4 Characteristics of built-in transistor www.rohm.com 2/6 20160208 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.