X-On Electronics has gained recognition as a prominent supplier of 2SC2413KT146P Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC2413KT146P Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC2413KT146P ROHM

2SC2413KT146P electronic component of ROHM
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See Product Specifications
Part No.2SC2413KT146P
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 25 V 50 mA 300MHz 200 mW Surface Mount SMT3
Datasheet: 2SC2413KT146P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3806 ea
Line Total: USD 0.38 
Availability - 1657
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 2SC2413KT146P More Buying Options & Price Grid(s)

Availability Price Quantity
1657
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3806
10 : USD 0.3762
3000 : USD 0.1001
9000 : USD 0.0946
24000 : USD 0.0946
45000 : USD 0.0902

940
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 139
Multiples : 1
139 : USD 0.2925
200 : USD 0.2682
500 : USD 0.2292

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC2413KT146P from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC2413KT146P and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SC2413K Datasheet Datasheet High-Frequency Amplifer Transistor (25V, 50mA, 300MHz) llOutline SOT-346 Parameter Value SC-59 V 25V CEO I 50mA C SMT3 llFeatures llInner circuit 1)Low collector capacitance. (Cob:Typ.1.3pF) llApplication HIGH FREQUENCY AMPLIFIER, FREQUENCY CONVERTER RF AMPLIFIER, LOCAL OSCILLATOR llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 2SC2413K 2928 T146 180 8 3000 A (SMT3) www.rohm.com www.rohm.com 1/6 20161028 - Rev.001 201 20156 R ROHM CoOHM Co., Ltd.., Ltd All r. All rights reserights resevred.ved. Not Recommended for New DesignsData Sheet 2SC2413K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 40 V CBO V Collector-emitter voltage 25 V CEO V Emitter-base voltage 5 V EBO I Collector current 50 mA C *1 Power dissipation P 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 40 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 25 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E Collector cut-off current I V = 24V - - 500 nA CBO CB Emitter cut-off current I V = 3V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - 100 300 mV CE(sat) C B h DC current gain V = 6V, I = 1mA 82 - 270 - FE CE C V = 6V, I = -1mA, CE E f Transition frequency 150 300 - MHz T f = 100MHz V = 6V, I = 0A, CB E C Output capacitance - 1.3 2.2 pF ob f = 1MHz hFE values are calssified as follows : rank P Q - - - h 82-180 120-270 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 2016 ROHM Co., Ltd. All rights reserved. 20161028 - Rev.001 www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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