TIP125 / TIP126 / TIP127 PNP Epitaxial Darlington Transistor November 2014 TIP125 / TIP126 / TIP127 PNP Epitaxial Darlington Transistor Equivalent Circuit C Features Medium Power Linear Switching Applications Complementary to TIP120 / TIP121 / TIP122 B TO-220 1 R1 R2 1.Base 2.Collector 3.Emitter E Ordering Information Part Number Top Mark Package Packing Method TIP125 TIP125 TO-220 3L (Single Gauge) Bulk TIP125TU TIP125 TO-220 3L (Single Gauge) Rail TIP126 TIP126 TO-220 3L (Single Gauge) Bulk TIP126TU TIP126 TO-220 3L (Single Gauge) Rail TIP127 TIP127 TO-220 3L (Single Gauge) Bulk TIP127TU TIP127 TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit TIP125 -60 V Collector-Base Voltage TIP126 -80 V CBO TIP127 -100 TIP125 -60 V Collector-Emitter Voltage TIP126 -80 V CEO TIP127 -100 V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -5 A C I Collector Current (Pulse) -8 A CP I Base Current (DC) -120 mA B T Junction Temperature 150 C J T Storage Temperature Range -65 to 150 C STG 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP125 / TIP126 / TIP127 Rev. 1.1.0 1 TIP125 / TIP126 / TIP127 PNP Epitaxial Darlington Transistor Thermal Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit Collector Dissipation (T = 25C) 2 A P W C Collector Dissipation (T = 25C) 65 C Electrical Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Conditions Min. Max. Unit TIP125 -60 Collector-Emitter Sustaining V (sus) TIP126 I = -100 mA, I = 0 -80 V CEO C B Voltage TIP127 -100 TIP125 V = -30 V, I =0-2 CE B I Collector Cut-Off Current TIP126 V = -40 V, I = 0 -2 mA CEO CE B TIP127 V = -50 V, I = 0 -2 CE B TIP125 V = -60 V, I = 0 -1 CB E I Collector Cut-Off Current TIP126 V = -80 V, I = 0 -1 mA CBO CB E TIP127 V = -100 V, I = 0 -1 CB E I Emitter Cut-Off Current V = -5 V, I = 0 -2 mA EBO EB C V = -3 V, I = -0.5 A 1000 CE C (1) h DC Current Gain FE V = -3 V, I = -3 A 1000 CE C I = -3 A, I = -12 mA -2 C B (1) V (sat) Collector-Emitter Saturation Voltage V CE I = -5 A, I = -20 mA -4 C B (1) V (on) Base-Emitter On Voltage V = -3 V, I = -3 A -2.5 V BE CE C V = -10 V, I = 0, CB E C Output Capacitance 300 pF ob f = 0.1 MHz Note: 1. Pulse test: pw 300 s, duty cycle 2%. 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP125 / TIP126 / TIP127 Rev. 1.1.0 2