ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Equivalent Circuit C Features Medium Power Linear Switching Applications B Complementary to TIP125 / TIP126 / TIP127 R1 R2 TO-220 1 E 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method TIP120 TIP120 TO-220 3L (Single Gauge) Bulk TIP120TU TIP120 TO-220 3L (Single Gauge) Rail TIP121 TIP121 TO-220 3L (Single Gauge) Bulk TIP121TU TIP121 TO-220 3L (Single Gauge) Rail TIP122 TIP122 TO-220 3L (Single Gauge) Bulk TIP122TU TIP122 TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit TIP120 60 V Collector-Base Voltage TIP121 80 V CBO TIP122 100 TIP120 60 V Collector-Emitter Voltage TIP121 80 V CEO TIP122 100 V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 5 A C I Collector Current (Pulse) 8 A CP I Base Current (DC) 120 mA B T Junction Temperature 150 C J T Storage Temperature Range -65 to 150 C STG 2001 Semiconductor Components Industries, LLC. Publication Order Number: TIP122/D November-2017, Rev.2