X-On Electronics has gained recognition as a prominent supplier of TIP125G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. TIP125G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

TIP125G ON Semiconductor

TIP125G electronic component of ON Semiconductor
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See Product Specifications
Part No.TIP125G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Darlington Transistors 5A 60V Bipolar Power PNP
Datasheet: TIP125G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1850
Multiples : 1
1850 : USD 0.4974
2500 : USD 0.4232
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MOQ : 500
Multiples : 500
500 : USD 0.7391
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MOQ : 1
Multiples : 1
1 : USD 0.8348
10 : USD 0.6607
100 : USD 0.4627
500 : USD 0.4007
1000 : USD 0.3402
2500 : USD 0.319
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MOQ : 41
Multiples : 41
41 : USD 0.6527
75 : USD 0.6265
250 : USD 0.6265
750 : USD 0.6265
2500 : USD 0.6265
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MOQ : 1
Multiples : 50
1 : USD 0.4373
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MOQ : 1
Multiples : 1
1 : USD 1.5515
10 : USD 1.1374
100 : USD 0.8532
500 : USD 0.7946
1000 : USD 0.6523
1850 : USD 0.6088
5550 : USD 0.5947
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MOQ : 3
Multiples : 1
3 : USD 1.063
10 : USD 0.9892
13 : USD 0.5455
100 : USD 0.3516
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MOQ : 16
Multiples : 1
16 : USD 0.6562
50 : USD 0.5599
100 : USD 0.5434
500 : USD 0.5325
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MOQ : 16
Multiples : 1
16 : USD 0.4138
100 : USD 0.3892
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16 : USD 0.4138
100 : USD 0.3892
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TIP125G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TIP125G and other electronic components in the Darlington Transistors category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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TIP120, TIP121, TIP122 (NPN) TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon www.onsemi.com Transistors Designed for generalpurpose amplifier and lowspeed switching DARLINGTON applications. 5 AMPERE Features COMPLEMENTARY SILICON High DC Current Gain POWER TRANSISTORS h = 2500 (Typ) I FE C 6080100 VOLTS, 65 WATTS = 4.0 Adc CollectorEmitter Sustaining Voltage 100 mAdc MARKING V = 60 Vdc (Min) TIP120, TIP125 CEO(sus) DIAGRAM = 80 Vdc (Min) TIP121, TIP126 = 100 Vdc (Min) TIP122, TIP127 4 Low CollectorEmitter Saturation Voltage V = 2.0 Vdc (Max) I = 3.0 Adc TO220AB CE(sat) C TIP12xG CASE 221A = 4.0 Vdc (Max) I = 5.0 Adc C AYWW STYLE 1 Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors STYLE 1: PbFree Packages are Available* PIN 1. BASE 1 2. COLLECTOR 2 3. EMITTER 3 4. COLLECTOR TIP12x = Device Code x = 0, 1, 2, 5, 6, or 7 A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 9 TIP120/DTIP120, TIP121, TIP122 (NPN) TIP125, TIP126, TIP127 (PNP) MAXIMUM RATINGS TIP120, TIP121, TIP122, Rating Symbol TIP125 TIP126 TIP127 Unit CollectorEmitter Voltage V 60 80 100 Vdc CEO CollectorBase Voltage V 60 80 100 Vdc CB EmitterBase Voltage V 5.0 Vdc EB Collector Current Continuous I 5.0 Adc C Peak 8.0 Base Current I 120 mAdc B Total Power Dissipation T = 25C P 65 W C D Derate above 25C 0.52 W/C Total Power Dissipation T = 25C P 2.0 W A D Derate above 25C 0.016 W/C Unclamped Inductive Load Energy (Note 1) E 50 mJ Operating and Storage Junction, Temperature Range T , T 65 to + 150 C J stg THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 1.92 C/W JC Thermal Resistance, JunctiontoAmbient R 62.5 C/W JA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. I = 1 A, L = 100 mH, P.R.F. = 10 Hz, V = 20 V, R = 100 C CC BE ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) V Vdc CEO(sus) (I = 100 mAdc, I = 0) TIP120, TIP125 C B 60 TIP121, TIP126 80 TIP122, TIP127 100 Collector Cutoff Current I mAdc CEO (V = 30 Vdc, I = 0) TIP120, TIP125 CE B 0.5 (V = 40 Vdc, I = 0) TIP121, TIP126 CE B 0.5 (V = 50 Vdc, I = 0) TIP122, TIP127 CE B 0.5 Collector Cutoff Current I mAdc CBO (V = 60 Vdc, I = 0) TIP120, TIP125 CB E 0.2 (V = 80 Vdc, I = 0) TIP121, TIP126 CB E 0.2 (V = 100 Vdc, I = 0) TIP122, TIP127 CB E 0.2 Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 2.0 mAdc BE C EBO ON CHARACTERISTICS (Note 2) DC Current Gain (I = 0.5 Adc, V = 3.0 Vdc) h 1000 C CE FE (I = 3.0 Adc, V = 3.0 Vdc) 1000 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 3.0 Adc, I = 12 mAdc) C B 2.0 (I = 5.0 Adc, I = 20 mAdc) C B 4.0 BaseEmitter On Voltage (I = 3.0 Adc, V = 3.0 Vdc) V 2.5 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS SmallSignal Current Gain (I = 3.0 Adc, V = 4.0 Vdc, f = 1.0 MHz) h 4.0 C CE fe Output Capacitance (V = 10 Vdc, I = 0, f = 0.1 MHz TIP125, TIP126, TIP127 C 300 pF CB E ob TIP120, TIP121, TIP122 200 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2% www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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