TIP120, TIP121, TIP122 (NPN) TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon www.onsemi.com Transistors Designed for generalpurpose amplifier and lowspeed switching DARLINGTON applications. 5 AMPERE Features COMPLEMENTARY SILICON High DC Current Gain POWER TRANSISTORS h = 2500 (Typ) I FE C 6080100 VOLTS, 65 WATTS = 4.0 Adc CollectorEmitter Sustaining Voltage 100 mAdc MARKING V = 60 Vdc (Min) TIP120, TIP125 CEO(sus) DIAGRAM = 80 Vdc (Min) TIP121, TIP126 = 100 Vdc (Min) TIP122, TIP127 4 Low CollectorEmitter Saturation Voltage V = 2.0 Vdc (Max) I = 3.0 Adc TO220AB CE(sat) C TIP12xG CASE 221A = 4.0 Vdc (Max) I = 5.0 Adc C AYWW STYLE 1 Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors STYLE 1: PbFree Packages are Available* PIN 1. BASE 1 2. COLLECTOR 2 3. EMITTER 3 4. COLLECTOR TIP12x = Device Code x = 0, 1, 2, 5, 6, or 7 A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 9 TIP120/DTIP120, TIP121, TIP122 (NPN) TIP125, TIP126, TIP127 (PNP) MAXIMUM RATINGS TIP120, TIP121, TIP122, Rating Symbol TIP125 TIP126 TIP127 Unit CollectorEmitter Voltage V 60 80 100 Vdc CEO CollectorBase Voltage V 60 80 100 Vdc CB EmitterBase Voltage V 5.0 Vdc EB Collector Current Continuous I 5.0 Adc C Peak 8.0 Base Current I 120 mAdc B Total Power Dissipation T = 25C P 65 W C D Derate above 25C 0.52 W/C Total Power Dissipation T = 25C P 2.0 W A D Derate above 25C 0.016 W/C Unclamped Inductive Load Energy (Note 1) E 50 mJ Operating and Storage Junction, Temperature Range T , T 65 to + 150 C J stg THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 1.92 C/W JC Thermal Resistance, JunctiontoAmbient R 62.5 C/W JA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. I = 1 A, L = 100 mH, P.R.F. = 10 Hz, V = 20 V, R = 100 C CC BE ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) V Vdc CEO(sus) (I = 100 mAdc, I = 0) TIP120, TIP125 C B 60 TIP121, TIP126 80 TIP122, TIP127 100 Collector Cutoff Current I mAdc CEO (V = 30 Vdc, I = 0) TIP120, TIP125 CE B 0.5 (V = 40 Vdc, I = 0) TIP121, TIP126 CE B 0.5 (V = 50 Vdc, I = 0) TIP122, TIP127 CE B 0.5 Collector Cutoff Current I mAdc CBO (V = 60 Vdc, I = 0) TIP120, TIP125 CB E 0.2 (V = 80 Vdc, I = 0) TIP121, TIP126 CB E 0.2 (V = 100 Vdc, I = 0) TIP122, TIP127 CB E 0.2 Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 2.0 mAdc BE C EBO ON CHARACTERISTICS (Note 2) DC Current Gain (I = 0.5 Adc, V = 3.0 Vdc) h 1000 C CE FE (I = 3.0 Adc, V = 3.0 Vdc) 1000 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 3.0 Adc, I = 12 mAdc) C B 2.0 (I = 5.0 Adc, I = 20 mAdc) C B 4.0 BaseEmitter On Voltage (I = 3.0 Adc, V = 3.0 Vdc) V 2.5 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS SmallSignal Current Gain (I = 3.0 Adc, V = 4.0 Vdc, f = 1.0 MHz) h 4.0 C CE fe Output Capacitance (V = 10 Vdc, I = 0, f = 0.1 MHz TIP125, TIP126, TIP127 C 300 pF CB E ob TIP120, TIP121, TIP122 200 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2% www.onsemi.com 2