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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain : h = 750 (Min.) I = 1.5 and 2.0A DC FE C Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25C unless otherwise noted Equivalent Circuit C C Symbol Parameter Value Units V Collector- Base Voltage : MJE800/801 60 V CBO : MJE802/803 80 V B V Collector-Emitter Voltage : MJE800/801 60 V CEO : MJE802/803 80 V V Emitter-Base Voltage 5 V EBO I Collector Current 4 A C R1 R2 I Base Current 0.1 A B P Collector Dissipation (T =25C) 40 W E R11 0k C C R20 .6k T Junction Temperature 150 C J T Storage Temperature - 55 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I = 50mA, I = 0 CEO C B : MJE800/801 60 V : MJE802/803 80 V I Collector Cut-off Current CEO : MJE800/801 V = 60V, I = 0 100 A CE B : MJE802/803 V = 80V, I = 0 100 A CE B I Collector Cut-off Current V = Rated BV , I = 0 100 A CBO CB CEO E V = Rated BV , I = 0 500 A CB CEO E T = 100C C I Emitter Cut-off Current V = 5V, I = 0 2 mA EBO BE C h DC Current Gain : MJE800/802 V = 3V, I = 1.5A 750 FE CE C : MJE801/803 V = 3V, I = 2A 750 CE C : ALL DEVICES V = 3V, I = 4A 100 CE C V (sat) Collector-Emitter Saturation Voltage CE : MJE800/802 I = 1.5A, I = 30mA 2.5 V C B : MJE801/803 I = 2A, I = 40mA 2.8 V C B : ALL DEVICES I = 4A, I = 40mA 3 V C B V (on) Base-Emitter ON Voltage BE : MJE800/802 V = 3V, I = 1.5A 2.5 V CE C : MJE801/803 V = 3V, I = 2A 2.5 V CE C : ALL DEVICES V = 3V, I = 4A 3 V CE C 2001 Fairchild Semiconductor Corporation Rev. A1, February 2001