X-On Electronics has gained recognition as a prominent supplier of BCV47E6327XT Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. BCV47E6327XT Darlington Transistors are a product manufactured by Infineon. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

BCV47E6327XT Infineon

BCV47E6327XT electronic component of Infineon
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See Product Specifications
Part No.BCV47E6327XT
Manufacturer: Infineon
Category: Darlington Transistors
Description: Trans Darlington NPN 60V 0.5A 3-Pin SOT-23 T/R
Datasheet: BCV47E6327XT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0354 ea
Line Total: USD 106.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0354

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Packaging
Brand
Emitter-Base Voltage
Collector Current Dc
Collector-Emitter Voltage
Operating Temp Range
Pin Count
Base-Emitter Saturation Voltage Max
Number Of Elements
Collector-Base Voltage
Collector-Emitter Saturation Voltage
Operating Temperature Classification
Package Type
Rad Hardened
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCV47E6327XT from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCV47E6327XT and other electronic components in the Darlington Transistors category and beyond.

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BCV27, BCV47 NPN Silicon Darlington Transistors For general AF applications 2 3 High collector current 1 High current gain Complementary types: BCV26, BCV46 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BCV27 30 BCV47 60 Collector-base voltage V CBO BCV27 40 BCV47 80 10 Emitter-base voltage V EBO 500 mA Collector current I C 800 Peak collector current, t 10 ms I p CM 100 Base current I B 200 Peak base current I BM 360 mW Total power dissipation- P tot T 74 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 2011-10-05 1BCV27, BCV47 Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 210 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V - (BR)CEO I = 10 mA, I = 0 , BCV27 30 - - C B I = 10 mA, I = 0 , BCV47 60 - - C B Collector-base breakdown voltage V (BR)CBO I = 100 A, I = 0 , BCV27 40 - - C E I = 100 A, I = 0 , BCV47 80 - - C E Emitter-base breakdown voltage V 10 - - V (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I A CBO V = 30 V, I = 0 , BCV27 - - 0.1 CB E V = 60 V, I = 0 , BCV47 - - 0.1 CB E V = 30 V, I = 0 , T = 150 C, BCV27 - - 10 CB E A V = 60 V, I = 0 , T = 150 C, BCV47 - - 10 CB E A - - 100 nA Emitter-base cutoff current I EBO V = 4 V, I = 0 EB C 1) - DC current gain h FE I = 100 A, V = 1 V, BCV27 4000 - - C CE I = 100 A, V = 1 V, BCV47 2000 - - C CE I = 10 mA, V = 5 V, BCV27 10000 - - C CE I = 10 mA, V = 5 V, BCV47 4000 - - C CE I = 100 mA, V = 5 V, BCV27 20000 - - C CE I = 100 mA, V = 5 V, BCV47 10000 - - C CE I = 0.5 A, V = 5 V, BCV27 4000 - - C CE I = 0.5 A, V = 5 V, BCV47 2000 - - C CE 1) Collector-emitter saturation voltage V - - 1 V CEsat I = 100 mA, I = 0.1 mA C B 1) Base emitter saturation voltage V - - 1.5 BEsat I = 100 mA, I = 0.1 mA C B 2011-10-05 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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