X-On Electronics has gained recognition as a prominent supplier of MJF127G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. MJF127G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

MJF127G ON Semiconductor

MJF127G electronic component of ON Semiconductor
MJF127G ON Semiconductor
MJF127G Darlington Transistors
MJF127G  Semiconductors

Images are for reference only
See Product Specifications
Part No. MJF127G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Bipolar (BJT) Transistor PNP - Darlington 100 V 5 A 2 W Through Hole TO-220FP
Datasheet: MJF127G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.5875 ea
Line Total: USD 1.59 
Availability - 422
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
184
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 56
Multiples : 50
56 : USD 1.1625
100 : USD 1.0505
500 : USD 0.7612
1200 : USD 0.685
2400 : USD 0.6152

422
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 1.5875
10 : USD 1.224
50 : USD 0.8921
100 : USD 0.8107
500 : USD 0.6688
1200 : USD 0.5808
2400 : USD 0.5808
6000 : USD 0.5621

71
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 1.708
10 : USD 1.5176
20 : USD 0.9128
54 : USD 0.8624
1000 : USD 0.8302

1891
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 100
Multiples : 50
100 : USD 1.0505
500 : USD 0.7612
1200 : USD 0.685
2400 : USD 0.6152

145
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 56
Multiples : 50
56 : USD 1.1625
100 : USD 1.0505
500 : USD 0.7612
1200 : USD 0.685
2400 : USD 0.6152

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJF127G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJF127G and other electronic components in the Darlington Transistors category and beyond.

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MJF122, MJF127 Complementary Power Darlingtons For Isolated Package Applications Designed for general purpose amplifiers and switching MJF122, MJF127 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V 100 Vdc CEO(sus) (I = 100 mAdc, I = 0) C B Collector Cutoff Current I 10 Adc CEO (V = 50 Vdc, I = 0) CE B Collector Cutoff Current I 10 Adc CBO (V = 100 Vdc, I = 0) CB E Emitter Cutoff Current (V = 5 Vdc, I = 0) I 2 mAdc BE C EBO ON CHARACTERISTICS (Note 3) DC Current Gain (I = 0.5 Adc, V = 3 Vdc) h 1000 C CE FE DC Current Gain (I = 3 Adc, V = 3 Vdc) 2000 C CE CollectorEmitter Saturation Voltage (I = 3 Adc, I = 12 mAdc) V 2 Vdc C B CE(sat) CollectorEmitter Saturation Voltage (I = 5 Adc, I = 20 mAdc) 3.5 C B BaseEmitter On Voltage (I = 3 Adc, V = 3 Vdc) V 2.5 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS SmallSignal Current Gain (I = 3 Adc, V = 4 Vdc, f = 1 MHz) h 4 C CE fe Output Capacitance MJF127 C 300 pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) MJF122 200 CB E 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5 t s R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS B C 3 V CC D , MUST BE FAST RECOVERY TYPES, e.g., 1 - 30 V 2 1N5825 USED ABOVE I 100 mA B R C MSD6100 USED BELOW I 100 mA B SCOPE t f TUT 1 V R 2 B 0.7 APPROX. 0.5 +8 V 8 k 120 D 51 1 0 0.3 t V = 0 V t d BE(off) r V 0.2 1 V = 30 V CC APPROX. +4 V I /I = 250 C B -12 V 25 s 0.1 PNP I = I B1 B2 0.07 NPN T = 25C J t , t 10 ns FOR t AND t , D IS DISCONNECTED r f d r 1 0.05 DUTY CYCLE = 1% AND V = 0 2 0.1 0.5 0.7 1 2537 10 0.2 0.3 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. I , COLLECTOR CURRENT (AMP) C Figure 2. Typical Switching Times Figure 1. Switching Times Test Circuit

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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