MJF2955G ON Semiconductor

MJF3055 (NPN), MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. MJF3055 (NPN), MJF2955 (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (Note 4) CollectorEmitter Sustaining Voltage V 90 Vdc CEO(sus) (I = 200 mAdc, I = 0) C B Collector Cutoff Current I 1.0 Adc CES (V = 90 Vdc, V = 0) CE BE Collector Cutoff Current I 1.0 Adc CBO (V = 90 Vdc, I = 0) CE E EmitterBase Leakage I 1.0 Adc EBO (V = 5.0 Vdc, I = 0) EB C ON CHARACTERISTICS (Note 4) DC Current Gain (I = 4.0 Adc, V = 4.0 Vdc) h 20 100 CE CE FE DC Current Gain (I = 10 Adc, V = 4.0 Vdc) 5.0 CE CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 4.0 Adc, I = 0.4 Adc) C B 1.0 (I = 10 Adc, I = 3.3 Adc) C B 2.5 BaseEmitter On Voltage V 1.5 Vdc BE(on) (I = 4.0 Adc, V = 4.0 Vdc) C BE DYNAMIC CHARACTERISTICS CurrentGainBandwidth Product f 2.0 MHz T (V = 10 Vdc, I = 0.5 Adc, f = 500 kHz) CE C test 4. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.