X-On Electronics has gained recognition as a prominent supplier of MJF3055G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJF3055G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJF3055G ON Semiconductor

MJF3055G electronic component of ON Semiconductor
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See Product Specifications
Part No.MJF3055G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 10A 90V 30W NPN
Datasheet: MJF3055G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.837 ea
Line Total: USD 1.84 
Availability - 669
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
679
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 50
Multiples : 50
50 : USD 1.0263
250 : USD 0.9412
500 : USD 0.9275
1000 : USD 0.8925
2500 : USD 0.8487
5000 : USD 0.8363

48
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 50
Multiples : 50
50 : USD 1.2532
100 : USD 1.1901
500 : USD 0.9527

23
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.9139
10 : USD 1.6563
50 : USD 1.4961
100 : USD 1.3302
500 : USD 1.2557
1000 : USD 1.2232

669
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.837
10 : USD 1.0186
100 : USD 0.9515
250 : USD 0.9449
500 : USD 0.935
750 : USD 0.7557

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the MJF3055G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJF3055G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MJF3055G Bipolar Junction Transistor (BJT) from ON Semiconductor is a high power, high voltage NPN transistor with a rated collector-emitter voltage of 90V and a collector current of up to 10A. Its maximum power dissipation is 30W, making it ideal for use in power applications such as DC-DC converters and power amplifiers. It features a low saturation voltage, low turn-on and turn-off times, and a low thermal resistance. As with all ON Semiconductor transistors, the MJF3055G is manufactured using high quality processes to ensure reliable operation.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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