X-On Electronics has gained recognition as a prominent supplier of MJF45H11G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJF45H11G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJF45H11G ON Semiconductor

MJF45H11G electronic component of ON Semiconductor
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See Product Specifications
Part No.MJF45H11G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 80 V 10 A 40MHz 2 W Through Hole TO-220FP
Datasheet: MJF45H11G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 0.8962 ea
Line Total: USD 44.81 
Availability - 727
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
727
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 50
Multiples : 50
50 : USD 0.8962
250 : USD 0.8225
500 : USD 0.81
1000 : USD 0.7975
2500 : USD 0.76
5000 : USD 0.7488
7500 : USD 0.7375
10000 : USD 0.7263

1
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 2.3443
10 : USD 2.0732
50 : USD 1.9038
100 : USD 1.7287
500 : USD 1.6496
1000 : USD 1.6157

196
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.24
3 : USD 2.03
10 : USD 1.778
12 : USD 1.54
31 : USD 1.456

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJF45H11G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJF45H11G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications MJF44H11 (NPN), MJF45H11 (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V 80 Vdc CEO(sus) (I = 30 mA, I = 0) C B Collector Cutoff Current I 1.0 A CES (V = Rated V , V = 0) CE CEO BE Emitter Cutoff Current I 10 A EBO (V = 5 Vdc) EB ON CHARACTERISTICS CollectorEmitter Saturation Voltage V 1.0 Vdc CE(sat) (I = 8 Adc, I = 0.4 Adc) C B BaseEmitter Saturation Voltage V 1.5 Vdc BE(sat) (I = 8 Adc, I = 0.8 Adc) C B DC Current Gain h 60 FE (V = 1 Vdc, I = 2 Adc) CE C DC Current Gain 40 (V = 1 Vdc, I = 4 Adc) CE C DYNAMIC CHARACTERISTICS Collector Capacitance C pF cb (V = 10 Vdc, f = 1 MHz) MJF44H11 CB test 130 MJF45H11 230 Gain Bandwidth Product f MHz T (I = 0.5 Adc, V = 10 Vdc, f = 20 MHz) MJF44H11 C CE 50 MJF45H11 40 SWITCHING TIMES Delay and Rise Times t + t ns d r (I = 5 Adc, I = 0.5 Adc) MJF44H11 C B1 300 MJF45H11 135 Storage Time t ns s (I = 5 Adc, I = I = 0.5 Adc) MJF44H11 C B1 B2 500 MJF45H11 500 Fall Time t ns f (I = 5 Adc, I = I = 0.5 Adc) MJF44H11 C B1 B2 140 MJF45H11 100 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 P (pk) Z = r(t) R JC(t) JC 0.05 0.07 R = 1.56C/W MAX JC 0.05 D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN t 1 0.03 READ TIME AT t t 1 2 0.02 0.01 T - T = P Z J(pk) C (pk) JC(t) DUTY CYCLE, D = t /t 1 2 SINGLE PULSE 0.01 0.01 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.02 t, TIME (ms) Figure 1. Thermal Response

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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