X-On Electronics has gained recognition as a prominent supplier of MJF45H11G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJF45H11G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJF45H11G ON Semiconductor

MJF45H11G electronic component of ON Semiconductor
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See Product Specifications
Part No.MJF45H11G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 80 V 10 A 40MHz 2 W Through Hole TO-220FP
Datasheet: MJF45H11G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 0.8686 ea
Line Total: USD 43.43 
Availability - 727
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
727
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 50
Multiples : 50
50 : USD 0.8686
250 : USD 0.7972
500 : USD 0.7851
1000 : USD 0.7729
2500 : USD 0.7366
5000 : USD 0.7257
7500 : USD 0.7148
10000 : USD 0.7039

1
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.8739
10 : USD 1.6258
50 : USD 1.4904
100 : USD 1.3359
500 : USD 1.269
1000 : USD 1.2366

196
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 2.268
3 : USD 2.086
10 : USD 1.82
12 : USD 1.582
31 : USD 1.498

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications MJF44H11 (NPN), MJF45H11 (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V 80 Vdc CEO(sus) (I = 30 mA, I = 0) C B Collector Cutoff Current I 1.0 A CES (V = Rated V , V = 0) CE CEO BE Emitter Cutoff Current I 10 A EBO (V = 5 Vdc) EB ON CHARACTERISTICS CollectorEmitter Saturation Voltage V 1.0 Vdc CE(sat) (I = 8 Adc, I = 0.4 Adc) C B BaseEmitter Saturation Voltage V 1.5 Vdc BE(sat) (I = 8 Adc, I = 0.8 Adc) C B DC Current Gain h 60 FE (V = 1 Vdc, I = 2 Adc) CE C DC Current Gain 40 (V = 1 Vdc, I = 4 Adc) CE C DYNAMIC CHARACTERISTICS Collector Capacitance C pF cb (V = 10 Vdc, f = 1 MHz) MJF44H11 CB test 130 MJF45H11 230 Gain Bandwidth Product f MHz T (I = 0.5 Adc, V = 10 Vdc, f = 20 MHz) MJF44H11 C CE 50 MJF45H11 40 SWITCHING TIMES Delay and Rise Times t + t ns d r (I = 5 Adc, I = 0.5 Adc) MJF44H11 C B1 300 MJF45H11 135 Storage Time t ns s (I = 5 Adc, I = I = 0.5 Adc) MJF44H11 C B1 B2 500 MJF45H11 500 Fall Time t ns f (I = 5 Adc, I = I = 0.5 Adc) MJF44H11 C B1 B2 140 MJF45H11 100 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 P (pk) Z = r(t) R JC(t) JC 0.05 0.07 R = 1.56C/W MAX JC 0.05 D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN t 1 0.03 READ TIME AT t t 1 2 0.02 0.01 T - T = P Z J(pk) C (pk) JC(t) DUTY CYCLE, D = t /t 1 2 SINGLE PULSE 0.01 0.01 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.02 t, TIME (ms) Figure 1. Thermal Response

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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