MJF44H11G ON Semiconductor

MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications MJF44H11 (NPN), MJF45H11 (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V 80 Vdc CEO(sus) (I = 30 mA, I = 0) C B Collector Cutoff Current I 1.0 A CES (V = Rated V , V = 0) CE CEO BE Emitter Cutoff Current I 10 A EBO (V = 5 Vdc) EB ON CHARACTERISTICS CollectorEmitter Saturation Voltage V 1.0 Vdc CE(sat) (I = 8 Adc, I = 0.4 Adc) C B BaseEmitter Saturation Voltage V 1.5 Vdc BE(sat) (I = 8 Adc, I = 0.8 Adc) C B DC Current Gain h 60 FE (V = 1 Vdc, I = 2 Adc) CE C DC Current Gain 40 (V = 1 Vdc, I = 4 Adc) CE C DYNAMIC CHARACTERISTICS Collector Capacitance C pF cb (V = 10 Vdc, f = 1 MHz) MJF44H11 CB test 130 MJF45H11 230 Gain Bandwidth Product f MHz T (I = 0.5 Adc, V = 10 Vdc, f = 20 MHz) MJF44H11 C CE 50 MJF45H11 40 SWITCHING TIMES Delay and Rise Times t + t ns d r (I = 5 Adc, I = 0.5 Adc) MJF44H11 C B1 300 MJF45H11 135 Storage Time t ns s (I = 5 Adc, I = I = 0.5 Adc) MJF44H11 C B1 B2 500 MJF45H11 500 Fall Time t ns f (I = 5 Adc, I = I = 0.5 Adc) MJF44H11 C B1 B2 140 MJF45H11 100 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 P (pk) Z = r(t) R JC(t) JC 0.05 0.07 R = 1.56C/W MAX JC 0.05 D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN t 1 0.03 READ TIME AT t t 1 2 0.02 0.01 T - T = P Z J(pk) C (pk) JC(t) DUTY CYCLE, D = t /t 1 2 SINGLE PULSE 0.01 0.01 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.02 t, TIME (ms) Figure 1. Thermal Response