X-On Electronics has gained recognition as a prominent supplier of MJF18004G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJF18004G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJF18004G ON Semiconductor

MJF18004G electronic component of ON Semiconductor
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Part No.MJF18004G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 450 V 5 A 13MHz 35 W Through Hole TO-220FP
Datasheet: MJF18004G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.0093 ea
Line Total: USD 2.01 
Availability - 9
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 2.0093
10 : USD 1.963
30 : USD 1.9323
100 : USD 1.9015

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
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We are delighted to provide the MJF18004G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJF18004G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJE18004, MJF18004 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific stateoftheart die designed for use in 220 V lineoperated switchmode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements: 5.0 AMPERES High and Flat DC Current Gain h FE Fast Switching 1000 VOLTS No Coil Required in Base Circuit for TurnOff (No Current Tail) 35 and 75 WATTS Full Characterization at 125 C COLLECTOR ON Semiconductor Six Sigma Philosophy Provides Tight and 2,4 Reproducible Parametric Distributions Two Package Choices: Standard TO220 or Isolated TO220 MJF18004, Case 221D, is UL Recognized at 3500 V : File 1 RMS BASE E69369 These Devices are PbFree and are RoHS Compliant* 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit MARKING CollectorEmitter Sustaining Voltage V 450 Vdc CEO DIAGRAMS CollectorBase Breakdown Voltage V 1000 Vdc CES 4 EmitterBase Voltage V 9.0 Vdc EBO Collector Current Continuous I 5.0 Adc C MJE18004G Collector Current Peak (Note 1) I 10 Adc CM AYWW Base Current Continuous I 2.0 Adc B TO220AB Base Current Peak (Note 1) I 4.0 Adc BM CASE 221A09 1 2 STYLE 1 RMS Isolation Voltage (Note 2) V MJF18004 V ISOL 3 Test No. 1 Per Figure 22a 4500 Test No. 2 Per Figure 22b 3500 Test No. 3 Per Figure 22c 1500 (for 1 sec, R.H. < 30%, T = 25 C) A Total Device Dissipation T = 25 C P W C D MJE18004 75 W/ C TO220 FULLPACK MJF18004 35 MJF18004G CASE 221D Derate above 25C MJE18004 0.6 AYWW STYLE 2 MJF18004 0.28 UL RECOGNIZED 1 Operating and Storage Temperature T , T 65 to 150 C J stg 2 3 THERMAL CHARACTERISTICS G = PbFree Package Characteristics Symbol Max Unit A = Assembly Location Thermal Resistance, JunctiontoCase R C/W JC Y = Year MJE18004 1.65 WW = Work Week MJF18004 3.55 Thermal Resistance, JunctiontoAmbient R 62.5 C/W JA ORDERING INFORMATION Maximum Lead Temperature for Soldering T 260 C L See detailed ordering and shipping information in the package Purposes 1/8 from Case for 5 Seconds dimensions section on page 8 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be *For additional information on our PbFree strategy assumed, damage may occur and reliability may be affected. and soldering details, please download the 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. ON Semiconductor Soldering and Mounting 2. Proper strike and creepage distance must be provided. Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 12 MJE18004/DMJE18004, MJF18004 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I = 100 mA, L = 25 mH) V 450 Vdc C CEO(sus) Collector Cutoff Current (V = Rated V , I = 0) I 100 Adc CE CEO B CEO Collector Cutoff Current (V = Rated V , V = 0) (T = 25 C) I 100 Adc CE CES EB C CES 500 (T = 125 C) C 100 Collector Cutoff Current (V = 800 V, V = 0) (T = 125 C) CE EB C Emitter Cutoff Current (V = 9.0 Vdc, I = 0) I 100 Adc EB C EBO ON CHARACTERISTICS BaseEmitter Saturation Voltage (I = 1.0 Adc, I = 0.1 Adc) V 0.82 1.1 Vdc C B BE(sat) BaseEmitter Saturation Voltage (I = 2.0 Adc, I = 0.4 Adc) 0.92 1.25 C B CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 1.0 Adc, I = 0.1 Adc) 0.5 C B 0.25 (T = 125 C) 0.6 C 0.29 (I = 2.0 Adc, I = 0.4 Adc) 0.45 C B 0.3 (T = 125 C) 0.8 C 0.36 (I = 2.5 Adc, I = 0.5 Adc) 0.75 C B 0.5 DC Current Gain (I = 1.0 Adc, V = 2.5 Vdc) h 12 21 C CE FE (T = 125 C) 20 C DC Current Gain (I = 0.3 Adc, V = 5.0 Vdc) 14 34 C CE 32 (T = 125 C) C DC Current Gain (I = 2.0 Adc, V = 1.0 Vdc) 6.0 11 C CE 7.5 (T = 125 C) C DC Current Gain (I = 10 mAdc, V = 5.0 Vdc) 10 22 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth (I = 0.5 Adc, V = 10 Vdc, f = 1.0 MHz) f 13 MHz C CE T Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 50 65 pF CB E ob Input Capacitance (V = 8.0 V) C 800 1000 pF EB ib Dynamic Saturation Voltage: V 6.8 Vdc CE(dsat) 1.0 s (I = 1.0 Adc (T = 125C) 14 C C I = 100 mAdc Determined 1.0 s and B1 2.4 V = 300 V) 3.0 s respectively after CC 3.0 s (T = 125C) 5.6 C rising I reaches 90% of B1 final I B1 11.3 1.0 s (see Figure 18) (I = 2.0 Adc (T = 125C) 15.5 C C I = 400 mAdc B1 1.3 V = 300 V) CC 3.0 s (T = 125C) 6.1 C www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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