MJE18004, MJF18004 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific stateoftheart die designed for use in 220 V lineoperated switchmode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements: 5.0 AMPERES High and Flat DC Current Gain h FE Fast Switching 1000 VOLTS No Coil Required in Base Circuit for TurnOff (No Current Tail) 35 and 75 WATTS Full Characterization at 125 C COLLECTOR ON Semiconductor Six Sigma Philosophy Provides Tight and 2,4 Reproducible Parametric Distributions Two Package Choices: Standard TO220 or Isolated TO220 MJF18004, Case 221D, is UL Recognized at 3500 V : File 1 RMS BASE E69369 These Devices are PbFree and are RoHS Compliant* 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit MARKING CollectorEmitter Sustaining Voltage V 450 Vdc CEO DIAGRAMS CollectorBase Breakdown Voltage V 1000 Vdc CES 4 EmitterBase Voltage V 9.0 Vdc EBO Collector Current Continuous I 5.0 Adc C MJE18004G Collector Current Peak (Note 1) I 10 Adc CM AYWW Base Current Continuous I 2.0 Adc B TO220AB Base Current Peak (Note 1) I 4.0 Adc BM CASE 221A09 1 2 STYLE 1 RMS Isolation Voltage (Note 2) V MJF18004 V ISOL 3 Test No. 1 Per Figure 22a 4500 Test No. 2 Per Figure 22b 3500 Test No. 3 Per Figure 22c 1500 (for 1 sec, R.H. < 30%, T = 25 C) A Total Device Dissipation T = 25 C P W C D MJE18004 75 W/ C TO220 FULLPACK MJF18004 35 MJF18004G CASE 221D Derate above 25C MJE18004 0.6 AYWW STYLE 2 MJF18004 0.28 UL RECOGNIZED 1 Operating and Storage Temperature T , T 65 to 150 C J stg 2 3 THERMAL CHARACTERISTICS G = PbFree Package Characteristics Symbol Max Unit A = Assembly Location Thermal Resistance, JunctiontoCase R C/W JC Y = Year MJE18004 1.65 WW = Work Week MJF18004 3.55 Thermal Resistance, JunctiontoAmbient R 62.5 C/W JA ORDERING INFORMATION Maximum Lead Temperature for Soldering T 260 C L See detailed ordering and shipping information in the package Purposes 1/8 from Case for 5 Seconds dimensions section on page 8 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be *For additional information on our PbFree strategy assumed, damage may occur and reliability may be affected. and soldering details, please download the 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. ON Semiconductor Soldering and Mounting 2. Proper strike and creepage distance must be provided. Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 12 MJE18004/DMJE18004, MJF18004 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I = 100 mA, L = 25 mH) V 450 Vdc C CEO(sus) Collector Cutoff Current (V = Rated V , I = 0) I 100 Adc CE CEO B CEO Collector Cutoff Current (V = Rated V , V = 0) (T = 25 C) I 100 Adc CE CES EB C CES 500 (T = 125 C) C 100 Collector Cutoff Current (V = 800 V, V = 0) (T = 125 C) CE EB C Emitter Cutoff Current (V = 9.0 Vdc, I = 0) I 100 Adc EB C EBO ON CHARACTERISTICS BaseEmitter Saturation Voltage (I = 1.0 Adc, I = 0.1 Adc) V 0.82 1.1 Vdc C B BE(sat) BaseEmitter Saturation Voltage (I = 2.0 Adc, I = 0.4 Adc) 0.92 1.25 C B CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 1.0 Adc, I = 0.1 Adc) 0.5 C B 0.25 (T = 125 C) 0.6 C 0.29 (I = 2.0 Adc, I = 0.4 Adc) 0.45 C B 0.3 (T = 125 C) 0.8 C 0.36 (I = 2.5 Adc, I = 0.5 Adc) 0.75 C B 0.5 DC Current Gain (I = 1.0 Adc, V = 2.5 Vdc) h 12 21 C CE FE (T = 125 C) 20 C DC Current Gain (I = 0.3 Adc, V = 5.0 Vdc) 14 34 C CE 32 (T = 125 C) C DC Current Gain (I = 2.0 Adc, V = 1.0 Vdc) 6.0 11 C CE 7.5 (T = 125 C) C DC Current Gain (I = 10 mAdc, V = 5.0 Vdc) 10 22 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth (I = 0.5 Adc, V = 10 Vdc, f = 1.0 MHz) f 13 MHz C CE T Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 50 65 pF CB E ob Input Capacitance (V = 8.0 V) C 800 1000 pF EB ib Dynamic Saturation Voltage: V 6.8 Vdc CE(dsat) 1.0 s (I = 1.0 Adc (T = 125C) 14 C C I = 100 mAdc Determined 1.0 s and B1 2.4 V = 300 V) 3.0 s respectively after CC 3.0 s (T = 125C) 5.6 C rising I reaches 90% of B1 final I B1 11.3 1.0 s (see Figure 18) (I = 2.0 Adc (T = 125C) 15.5 C C I = 400 mAdc B1 1.3 V = 300 V) CC 3.0 s (T = 125C) 6.1 C www.onsemi.com 2