MMBTA13,MMBTA14 Features Halogen Free.Gree Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Darlington Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Amplifier Transistor Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 (Note 2) Thermal Resistance: 556 /W Junction to Ambient Parameter Symbol Rating Unit SOT-23 V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 30 V CEO A V D Emitter-Base Voltage 10 V EBO I Continuous Collector Current 300 mA C 3 B C P Power Dissipation 225 mW 1 2 D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, F E <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2. Mounted on FR-5 PCB 1.0 x0.75 x0.062 . G H J L K Marking: DIMENSIONS MMBTA13: K2D INCHES MM DIM NOTE MMBTA14: K3D / 1N MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 Internal Structure C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 3 G 0.0004 0.006 0.01 0.15 H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.007 0.020 0.20 0.50 1 1.BASE Suggested Solder Pad Layout 2.EMITTER 0.031 3.COLLECTOR 0.800 2 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-4-12012020 1/4 MCCSEMI.COMMMBTA13,MMBTA14 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions I V =30V, I =0 Collector Cutoff Current 0.1 A CBO CB E I V =10V, I =0 Emitter Cutoff Current 0.1 A EBO EB C MMBTA13 5000 h V =5V, I =10mA FE(1) CE C MMBTA14 10000 DC Current Gain MMBTA13 10000 h V =1V, I =150mA FE(2) CE C MMBTA14 20000 Collector-Emitter Saturation Voltage V 1.5 V I =100mA, I =0.1mA CE(sat) C B Base-Emitter Voltage V 2.0 V V =5V, I =100mA BE CE C Transition Frequency f 125 MHz V =5V, I =10mA, f=100MHz T CE C Delay Time t 10 ns V =30V, V =0.5V, I =150mA, d CC BE C I =15mA Rise Time t 25 ns B1 r Storage Time t 225 ns s V =30V, I =150mA, I =I =15mA CC C B1 B2 Fall Time t 60 ns f C V =10V, I =0,f=1MHz Output Capacitance 8 pF obo CB E C V =0.5V, I =0, f=1MHz Input Capacitance 15 pF ibo EB C Rev.3-4-12012020 2/4 MCCSEMI.COM