MMSTA28T146 ROHM

SSTA28 / MMSTA28 Transistors NPN general purpose transistor SSTA28 / MMSTA28 z Features z External dimensions (Unit : mm) 1) BVCES < 80V (Ic=100A) SSTA28 2.90.2 +0.2 0.95 0.1 1.90.2 z Package, marking and packaging specifications 0.450.1 0.95 0.95 Part No. SSTA28 MMSTA28 (1) (2) 0~0.1 Packaging type SST3 SMT3 0.2Min. Marking RAT RAT (3) Code T116 T146 +0.1 (1) Emitter 0.15 Basic ordering unit (pieces) 3000 3000 +0.1 0.06 0.4 0.05 (2) Base ROHM : SST3 All terminals have same dimensions (3) Collector JEDEC : SOT-23 MMSTA28 2.90.2 +0.2 1.1 0.1 1.90.2 z Absolute maximum ratings (Ta=25C) 0.80.1 0.95 0.95 Parameter Symbol Limits Unit (1) (2) 0~0.1 Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V (3) Emitter-base voltage VEBO 12 V Collector current IC 0.3 A +0.1 0.15 +0.1 0.06 ROHM : SMT3 0.4 (1) Emitter Collector power dissipation PC 0.2 W 0.05 EIAJ : SC-59 (2) Base All terminals have same dimensions Junction temperature Tj 150 C JEDEC : SOT-346 (3) Collector Storage temperature Tstg 55 to +150 C z Electrical characteristics (Ta=25C) Max. Parameter Symbol Min. Typ. Unit Conditions Collector-base breakdown voltage BVCBO 80 V IC = 100A Collector-emitter breakdown voltage BVCES 80 V IC = 100A Emitter-base breakdown voltage BVEBO 12 V IE = 10A ICBO 0.1 A VCB = 60V Collector cutoff current IEBO 0.1 A VEB = 10V ICES 0.5 A VCE = 10V VCE(sat) 1 0.7 1.2 V IC/IB = 10mA/10A Collector-emitter saturation voltage VCE(sat) 2 0.8 1.5 V IC/IB = 100mA/0.1mA Base-emitter saturation voltage VCE/IB = 5V/100mA VBE(on) 1.4 2.0 V 10000 VCE = 5V , IC = 10mA DC current transfer ratio hFE 10000 VCE = 5V , IC = 100mA Transition frequency MHz VCE = 5V , IE = 10mA , f = 100MHz fT 125 200 Output Capecitance COb 5.0 8.0 pF VCB = 10V , IE = 0 , f = 1MHz Rev.A 1/2 +0.2 +0.2 1.6 1.3 0.1 0.1 2.80.2 2.40.2 0.3Min.SSTA28 / MMSTA28 Transistors z Electrical characteristic curves 100 500 200k Ta=25C 1.6 1.4 Ta=25C Ta=25C 90 450 50 100k 45 1.2 80 400 40 VCE=5V 35 50k 30 70 350 1.0 25 20 60 300 3V 15 0.8 20k 50 250 10 0.6 1V 40 10k 200 5 30 150 0.4 5k 20 100 0.2 10 50 IB=0A IB=0A 0 2k 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 2 5 10 20 50 100 200 500 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VCE-COLLECTOR-EMITTER VOLTAGE (V) VCE-COLLECTOR-EMITTER VOLTAGE (V) IC-COLLECTOR CURRENT (mA) Fig.2 Typical output characteristics Fig.3 DC current gain vs. collector Fig.1 Grounded emitter output characteristics current ( ) 2.2 200k 1.8 Ic/IB=1000 VCE=5V Ic/IB=1000 2.0 Ta=25C 1.6 100k 25C 1.8 1.4 50k Ta= 40C 1.6 1.2 40C 1.4 25C 1.0 20k Ta= 40C 1.2 0.8 25C 10k 1.0 125C 0.6 125C 0.8 5k 0.4 0.6 0.2 2k 0 0.4 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 IC-COLLECTOR CURRENT (mA) IC-COLLECTOR CURRENT (mA) IC-COLLECTOR CURRENT (mA) Fig.4 DC current gain vs. collector Fig.5 Collecor emitter saturation Fig.6 Base emitter saturation voltage current voltage vs collector current vs collector current 2.2 100 1000 Ta=25C VCE=5V f=1MHz VCE=10V Ta=25C 2.0 50 500 1.8 Ta= 40C 1.6 200 20 1.4 25C 10 100 1.2 5 50 1.0 125C Cib 0.8 Cob 2 20 0.6 10 0.4 1 1 10 100 1000 1 2 5 10 20 50 100 200 500 1000 0.5 1 2 5 10 20 50 IC-COLLECTOR CURRENT (mA) IC-COLLECTOR CURRENT (mA) REVERSE BIAS VOLTAGE (V) Fig.9 Current gain-bandwdth product Fig.7 Base emitterO voltage Fig.8 Capacitance vs collector current vs collector current vs reverse bias voltage Rev.A 2/2 VBE(ON) BASE EMITTER VOLTAGE (V) hFE-DC CURRENT GAIN IC-COLLECTOR CURRENT (mA) VCE(SAT) COLLECTOR EMITTER SATURATION VOLTAGE (V) IC-COLLECTOR CURRENT (mA) CAPACITANCE (pF) VCE(SAT) COLLECTOR EMITTER SATURATION hFE-DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT (MHz) VOLTAGE (V)