MMSTA56T146 ROHM

SSTA56 / MMSTA56 Transistors PNP general purpose transistor SSTA56 / MMSTA56 z Features z External dimensions (Unit : mm) 1) BVCEO 40V (IC = 100P A) SSTA56 2) Complements the SSTA06 / MMSTA06. 2.90.2 +0.2 0.95 0.1 1.90.2 0.450.1 0.95 0.95 (1) (2) 0~0.1 zz Package, marking and packaging specifications 0.2Min. (3) Part No. SSTA56 MMSTA56 +0.1 (1) Emitter 0.15 +0.1 0.06 Packaging type SST3 SMT3 0.4 0.05 (2) Base ROHM : SST3 Marking R2G R2G All terminals have same dimensions (3) Collector JEDEC : SOT-23 Code T116 T146 Basic ordering unit (pieces) 3000 3000 MMSTA56 2.90.2 +0.2 1.1 0.1 1.90.2 0.80.1 0.95 0.95 (1) (2) 0~0.1 (3) +0.1 0.15 +0.1 0.06 ROHM : SMT3 0.4 (1) Emitter 0.05 EIAJ : SC-59 (2) Base All terminals have same dimensions JEDEC : SOT-346 (3) Collector zz Absolute maximum ratings (Ta=25q C) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 4 V Collector current IC 0.5 A 0.2 W Collector power dissipation PC 0.35 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Mounted on a 750.6mm CERAMIC SUBSTRATE z Electrical characteristics (Ta=25q C) Parameter Symbol Min. Typ. Max. Unit Conditions Emitter-base breakdown voltage BVEBO 4 V IC = 100mA Collector-emitter breakdown voltage BVCEO 80 V IC = 1mA ICBO 0.1 VCB= 80V Collector cutoff current A ICEO 1 VCE= 60V Collector-emitter saturation voltage VCE(sat) 0.25 V IC /IB= 100mA/10mA Base-emitter saturation voltage VBE(on) 1.2 V VCE/IB= 1V/100mA 100 VCE= 1V , IC = 10mA DC current transfer ratio hFE 100 VCE= 1V , IC = 100mA Transition frequency fT 50 MHz VCE= 1V , IE= 100mA , f=100MHz Rev.A 1/2 Not Recommended for New Designs +0.2 +0.2 1.6 1.3 0.1 0.1 2.80.2 2.40.2 0.3Min. SSTA56 / MMSTA56 Transistors z Electrical characteristic curves 500 1000 1000 Ta=25C VCE=3V Ta=25C 4.5mA 4.0mA 3.5mA Ta=125C 400 3.0mA VCC=5V 25C 300 40C 3V 100 100 1.0mA 200 1V 0.5mA 100 IB=0mA 10 10 0 1 2 5 10 20 50 100 200 500 1000 1 10 100 1000 0 0.4 0.8 1.2 1.6 2.0 IC-COLLECTOR CURRENT (mA) VCE-COLLECTOR-EMITTER VOLTAGE (V) IC-COLLECTOR CURRENT (mA) Fig.2 DC current gain vs. collector Fig.1 Grounded emitter output Fig.3 DC current gain vs. collector characteristics current ( ) current ( ) 1.8 1.8 Ta=25C VCE=3V IC / IB=10 IC / IB=10 1.6 1.6 0.3 1.4 1.4 1.2 1.2 Ta=125C 1.0 1.0 0.2 25C Ta=40C 0.8 0.8 25C 0.6 0.6 40C 125C 0.1 0.4 0.4 0.2 0.2 0 0 0 1 10 100 1000 1 10 100 1000 1 10 100 1000 IC-COLLECTOR CURRENT (mA) IC-COLLECTOR CURRENT (mA) IC-COLLECTOR CURRENT (mA) Fig.4 Collector emitter saturation Fig.5 Base-emitter saturation Fig.6 Grounded emitter propagation characteristics voltage vs. collector current voltage vs. collector current 500 1000 Ta=25C Ta=25C VCE=10V f=1MHz 100 Cib 100 Cob 10 10 5 1 10 100 1000 0.5 1 10 50 REVERSE BIAS VOLTAGE (V) IC-COLLECTOR CURRENT (mA) Fig.8 Gain bandwidth product Fig.7 Input/output capecitance vs. collector current vs. voltage Rev.A 2/2 2.0mA 1.5mA 2.5mA 5.0mA Not Recommended for New Designs VCE(SAT)COLLECTOR EMITTER SATURATION VOLTAGE (V) CAPACITANCE (pF) IC-COLLECTOR CURRENT (mA) CURRENT GAIN-BANDWIDTH PRODUCT (MHz) VBE(SAT)BASE EMITTER SATURATION VOLTAGE (V) hFE-DC CURRENT GAIN VBE(ON)BASE EMITTER VOLTAGE (V) hFE-DC CURRENT GAIN