BSP50-BSP52 NPN Silicon Darlington Transistors High collector current 4 3 Low collector-emitter saturation voltage 2 1 Complementary types: BSP60 - BSP62 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BSP50 BSP50 1=B 2=C 3=E 4=C - - SOT223 BSP51 BSP51 1=B 2=C 3=E 4=C - - SOT223 BSP52 BSP52 1=B 2=C 3=E 4=C - - SOT223 Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BSP50 45 BSP51 60 BSP52 80 Collector-base voltage V CBO BSP50 60 BSP51 80 BSP52 90 5 Emitter-base voltage V EBO 1 A Collector current I C 2 Peak collector current, t 10 ms I p CM 100 mA Base current I B 1.5 W Total power dissipation- P tot T 124 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 1 2011-10-05BSP50-BSP52 Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 17 thJS Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics V Collector-emitter breakdown voltage V (BR)CEO I = 10 mA, I = 0 , BSP50 45 - - C B I = 10 mA, I = 0 , BSP51 60 - - C B I = 10 mA, I = 0 , BSP52 80 - - C B Collector-base breakdown voltage V (BR)CBO I = 100 A, I = 0 , BSP50 60 - - C E I = 100 A, I = 0 , BSP51 80 - - C E I = 100 A, I = 0 , BSP52 90 - - C E Emitter-base breakdown voltage V 5 - - (BR)EBO I = 100 A, I = 0 E C - - 10 Collector-emitter cutoff current I A CES V = V , V = 0 CE BE CE0max - - 10 A Emitter-base cutoff current I EBO V = 4 V, I = 0 EB C 2) - DC current gain h FE I = 150 mA, V = 10 V 1000 - - C CE I = 500 mA, V = 10 V 2000 - - C CE 2) Collector-emitter saturation voltage V V CEsat I = 500 mA, I = 0.5 mA - - 1.3 C B I = 1 A, I = 1 mA - - 1.8 C B 2) Base emitter saturation voltage V BEsat I = 500 mA, I = 0.5 mA - - 1.9 C B I = 1 mA, I = 1 A - - 2.2 C B 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2 Pulse test: t < 300s D < 2% 2 2011-10-05