MMBTA92 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Silicon High Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Voltage Transistor Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 (Note 2) Thermal Resistance: 556 /W Junction to Ambient (Note 3) Thermal Resistance: 417 /W Junction to Ambient SOT-23 Parameter Symbol Rating Unit Collector-Base Voltage V -300 V CBO A Collector-Emitter Voltage V -300 V CEO D Emitter-Base Voltage V -5 V EBO 3 B Continuous Collector Current I -300 mA C C 1 2 Peak Collector Current I -500 mA CM F E (Note 2) P 225 mW Power Dissipation D (Note 3) P 300 mW D Power Dissipation G H J Note: L 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, K <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2. Device Mounted on FR5 Board. DIMENSIONS 3. Device with Alumina Substrate. INCHES MM DIM NOTE MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 Marking: 2D B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 Internal Structure E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 G 0.01 0.15 0.0004 0.006 3 H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 1 L 0.007 0.020 0.20 0.50 1.BASE 2.EMITTER 2 3.COLLECTOR Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-3-12012020 1/4 MCCSEMI.COMMMBTA92 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =-100A, I =0 Collector-Base Breakdown Voltage -300 V (BR)CBO C E V I =-1mA, I =0 Collector-Emitter Breakdown Voltage -300 V (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I =-100A, I =0 (BR)EBO E C Collector Cutoff Current I -0.25 A V =-200V, I =0 CBO CB E Emitter Cutoff Current I -0.1 A V =-5V, I =0 EBO EB C h 60 V =-10V, I =-1mA FE(1) CE C DC Current Gain h 100 200 V =-10V, I =-10mA FE(2) CE C h 60 V =-10V, I =-30mA FE(3) CE C Collector-Emitter Saturation Voltage V -0.2 V I =-20mA, I =-2mA CE(sat) C B Base-Emitter Saturation Voltage V -0.9 V I =-20mA, I =-2mA BE(sat) C B Transition Frequency f 50 MHz V =-20V, I =-10mA, f=30MHz T CE C Collector output Capacitance C 6 pF V =-20V, I =0,f=1MHz cb CB E Rev.3-3-12012020 2/4 MCCSEMI.COM