MMBTA42 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Silicon High Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Voltage Transistor Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 (Note 2) Thermal Resistance: 556 /W Junction to Ambient (Note 3) Thermal Resistance: 357 /W Junction to Ambient SOT-23 Parameter Symbol Rating Unit Collector-Base Voltage V 300 V CBO A Collector-Emitter Voltage V 300 V CEO D Emitter-Base Voltage V 6 V EBO 3 B Continuous Collector Current I 500 mA C C 1 2 (Note 2) P 225 mW Power Dissipation D F E (Note 3) P 350 mW Power Dissipation D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, G H J <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. L 2. Device Mounted on FR5 Board. K 3. Device with Alumina Substrate. DIMENSIONS Marking: 1D INCHES MM DIM NOTE MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 Internal Structure C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 3 F 0.018 0.024 0.45 0.60 G 0.01 0.15 0.0004 0.006 H 0.035 0.043 0.90 1.10 1 1.BASE J 0.003 0.007 0.08 0.18 2.EMITTER K 0.012 0.020 0.30 0.51 3.COLLECTOR L 0.007 0.020 0.20 0.50 2 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-3-12012020 1/4 MCCSEMI.COMMMBTA42 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =100A, I =0 Collector-Base Breakdown Voltage 300 V (BR)CBO C E V I =1mA, I =0 Collector-Emitter Breakdown Voltage* 300 V (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I =100A, I =0 (BR)EBO E C Collector Cutoff Current I 0.1 A V =200V, I =0 CBO CB E Emitter Cutoff Current I 0.1 A V =6V, I =0 EBO EB C h 25 V =10V, I =1mA FE(1) CE C DC Current Gain* h 40 V =10V, I =10mA FE(2) CE C h 40 V =10V, I =30mA FE(3) CE C Collector-Emitter Saturation Voltage V 0.5 V I =20mA, I =2mA CE(sat) C B Base-Emitter Saturation Voltage V 0.9 V I =20mA, I =2mA BE(sat) C B Transition Frequency f 50 MHz V =20V, I =10mA, f=100MHz T CE C Collector output Capacitance C 3 pF V =20V, I =0,f=1MHz cb CB E *.Pulse test: Pulse Width 300s,Duty Cycle 2.0%. Rev.3-3-12012020 2/4 MCCSEMI.COM