MMBTA44 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Silicon High Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Voltage Transistor Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 357 /W Junction to Ambient Parameter Symbol Rating Unit V SOT-23 Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 400 V CEO A V Emitter-Base Voltage 6 V EBO D I Continuous Collector Current 100 mA C 3 P B Power Dissipation 350 mW C D 1 2 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, F E <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. G H J L Marking: 3D K DIMENSIONS Internal Structure INCHES MM DIM NOTE MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 3 B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 1 E 0.067 0.083 1.70 2.10 1.BASE F 0.018 0.024 0.45 0.60 2.EMITTER G 0.01 0.15 0.0004 0.006 3.COLLECTOR 2 H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.007 0.020 0.20 0.50 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-4-12012020 1/4 MCCSEMI.COMMMBTA44 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =100A, I =0 Collector-Base Breakdown Voltage 400 V (BR)CBO C E V I =1mA, I =0 Collector-Emitter Breakdown Voltage 400 V (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I =10A, I =0 (BR)EBO E C Collector Cutoff Current I 0.1 A V =400V, I =0 CBO CB E Emitter Cutoff Current I 0.1 A V =4V, I =0 EBO EB C h 40 V =10V, I =1mA FE(1) CE C h 50 200 V =10V, I =10mA FE(2) CE C DC Current Gain h 45 V =10V, I =50mA FE(3) CE C h 40 V =10V, I =100mA FE(4) CE C 0.4 V I =1mA, I =0.1mA C B Collector-Emitter Saturation Voltage V CE(sat) 0.75 V I =50mA, I =5mA C B Base-Emitter Saturation Voltage V 0.75 V I =10mA, I =1mA BE(sat) C B Transition Frequency f 50 MHz V =20V, I =10mA, f=30MHz T CE C Rev.3-4-12012020 2/4 MCCSEMI.COM