X-On Electronics has gained recognition as a prominent supplier of BC516 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. BC516 Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

BC516 ON Semiconductor

BC516 electronic component of ON Semiconductor
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See Product Specifications
Part No.BC516
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: BC516 LOOSE PNP TO92 DARLINGTON TRAN S RAD
Datasheet: BC516 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0831 ea
Line Total: USD 0.08 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 1
Multiples : 1
1 : USD 0.0831
5 : USD 0.0827
50 : USD 0.0772
1000 : USD 0.0686
5000 : USD 0.0667
10000 : USD 0.0664

0
Ship by Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5856
100 : USD 0.2928
250 : USD 0.2635
500 : USD 0.2196
1000 : USD 0.1976

   
Manufacturer
Product Category
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the BC516 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC516 and other electronic components in the Darlington Transistors category and beyond.

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BC516 PNP Darlington Transistor August 2015 BC516 PNP Darlington Transistor Features This device is designed for applications reguiring extremely high current gain at currents to 1 A. Sourced from process 61. 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number Top Mark Package Packing Method BC516 D27Z BC516 TO-92 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Emitter Voltage -30 V CEO V Collector-Base Voltage -40 V CBO V Emitter-Base Voltage -10 V EBO I Collector Current - Continuous -1 A C T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC516 Rev. 1.2BC516 PNP Darlington Transistor (1) Thermal Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Max. Unit P Total Device Dissipation, T = 25C 625 mW D A R Thermal Resistance, Junction-to-Ambient 200 C/W JA R Thermal Resistance, Junction-to-Case 83.3 C/W JC Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. (2) Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Typ. Max. Unit V Collector-Emitter Breakdown Voltage I = -2 mA, I = 0 -30 V CEO C B V Collector-Base Breakdown Voltage I = -100 A, I = 0 -40 V CBO C E V Emitter-Base Breakdown Voltage I = -10 A, I = 0 -10 V EBO E C I Collector Cut-Off Current V = -30 V, I = 0 -100 nA CBO CB E h DC Current Gain I = -20 mA, V = -2 V 30,000 FE C CE V (sat) Collector-Emitter Saturation Voltage I = -100 mA, I = -0.1 mA -1 V CE C B V (on) Base-Emitter On Voltage I = -10 mA, V = -5 V -1.4 V BE C CE I = -10 mA, V = -5 V, (3) C CE f Current Gain - Bandwidth Product 200 MHz T f = 100 MHz Notes: 2. Pulse test: pulse width 2.0% 3. f = Ih I f T fe test 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC516 Rev. 1.2 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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