DATA SHEET www.onsemi.com NPN Epitaxial Silicon Transistor TO92 BC546 / BC547 / BC548 / CASE 135AN BC549 / BC550 1 2 3 Features Switching and Amplifier HighVoltage: BC546, V = 65 V CEO TO92 LowNoise: BC549, BC550 CASE 135AR Complement to BC556, BC557, BC558, BC559, and BC560 1 2 These are PbFree Devices 3 1. Collector 2. Base 3. Emitter ABSOLUTE MAXIMUM RATINGS MARKING DIAGRAM Parameter Symbol Value Unit CollectorBase Voltage V V CBO BC546 80 ABC BC547 / BC550 50 5xyz BC548 / BC549 30 YWW CollectorEmitter Voltage V V CEO BC546 65 BC547 / BC550 45 BC548 / BC549 30 BC5xyz = Device Code EmitterBase Voltage V V EBO x = 4 or 5 BC546 / BC547 6 y = 6, 7, 8, 9 or 0 BC548 / BC549 / BC550 5 z = A, B, C Collector Current (DC) I 100 mA A = Assembly Location C Y = Year Collector Power Dissipation P 500 mW C WW = Work Week Junction Temperature T 150 C J Storage Temperature Range T 65 to +150 C STG ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering and shipping information on page 4 of device. If any of these limits are exceeded, device functionality should not be this data sheet. assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: August, 2021 Rev. 4 BC550/DBC546 / BC547 / BC548 / BC549 / BC550 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cutoff Current V = 30 V, I = 0 15 nA CBO CB E h DC Current Gain V = 5 V, I = 2 mA 110 800 FE CE C V (sat) CollectorEmitter Saturation Voltage I = 10 mA, I = 0.5 mA 90 250 mV CE C B I = 100 mA, I = 5 mA 250 600 C B V (sat) BaseEmitter Saturation Voltage I = 10 mA, I = 0.5 mA 700 mV BE C B I = 100 mA, I = 5 mA 900 C B V (on) BaseEmitter On Voltage V = 5 V, I = 2 mA 580 660 700 mV BE CE C V = 5 V, I = 10 mA 720 CE C f Current Gain Bandwidth Product V = 5 V, I = 10 mA, 300 MHz T CE C f = 100 MHz C Output Capacitance V = 10 V, I = 0, f = 1 MHz 3.5 6.0 pF ob CB E C Input Capacitance V = 0.5 V, I = 0, f = 1 MHz 9 pF ib EB C NF Noise Figure BC546 / BC547 / BC548 V = 5 V, I = 200 A, 2.0 10.0 dB CE C f = 1 kHz, R = 2 k G BC549 / BC550 1.2 4.0 BC549 V = 5 V, I = 200 A, 1.4 4.0 CE C R = 2 k , f = 30 to 15000 MHz G BC550 1.4 3.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. h CLASSIFICATION FE Classification A B C h 110 ~ 220 200 ~ 450 420 ~ 800 FE www.onsemi.com 2