BC517RL1G ON Semiconductor

BC517 Darlington Transistors NPN Silicon Features BC517 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CES (I = 2.0 mAdc, I = 0) 30 C BE Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 40 C E Emitter Base Breakdown Voltage V Vdc (BR)EBO 10 (I = 100 Adc, I = 0) E C Collector Cutoff Current I nAdc CES (V = 30 Vdc) 500 CE Collector Cutoff Current I nAdc CBO (V = 30 Vdc, I = 0) 100 CB E Emitter Cutoff Current I nAdc EBO (V = 10 Vdc, I = 0) 100 CB C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 20 mAdc, V = 2.0 Vdc) 30,000 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 100 mAdc, I = 0.1 mAdc) 1.0 C B Collector Emitter Saturation Voltage V Vdc BE(on) (I = 10 mAdc, V = 5.0 Vdc) 1.4 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 2) f MHz T (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) 200 C CE 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 2. f = h f T fe test R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model