X-On Electronics has gained recognition as a prominent supplier of BC546BRL1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC546BRL1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC546BRL1G ON Semiconductor

BC546BRL1G electronic component of ON Semiconductor
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See Product Specifications
Part No.BC546BRL1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 100mA 80V NPN
Datasheet: BC546BRL1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.0301 ea
Line Total: USD 60.2 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 0.6533
25 : USD 0.2245
100 : USD 0.1141
250 : USD 0.0828
500 : USD 0.065
1000 : USD 0.0555

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 0.0378
10 : USD 0.0378
100 : USD 0.0358

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3206
Multiples : 1
3206 : USD 0.0954

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2000
Multiples : 2000
2000 : USD 0.0301

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC546BRL1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC546BRL1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features BC546B, BC547A, B, C, BC548B, C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V V (BR)CEO (I = 1.0 mA, I = 0) BC546 65 C B BC547 45 BC548 30 Collector Base Breakdown Voltage V V (BR)CBO (I = 100 Adc) BC546 80 C BC547 50 BC548 30 Emitter Base Breakdown Voltage V V (BR)EBO (I = 10 A, I = 0) BC546 6.0 E C BC547 6.0 BC548 6.0 Collector Cutoff Current I CES (V = 70 V, V = 0) BC546 0.2 15 nA CE BE (V = 50 V, V = 0) BC547 0.2 15 CE BE (V = 35 V, V = 0) BC548 0.2 15 CE BE (V = 30 V, T = 125C) BC546/547/548 4.0 A CE A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) BC547A 90 C CE BC546B/547B/548B 150 BC548C 270 (I = 2.0 mA, V = 5.0 V) BC546 110 450 C CE BC547 110 800 110 800 BC548 BC547A 110 180 220 BC546B/547B/548B 200 290 450 BC547C/BC548C 420 520 800 (I = 100 mA, V = 5.0 V) BC547A/548A 120 C CE BC546B/547B/548B 180 BC548C 300 Collector Emitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) 0.09 0.25 C B (I = 100 mA, I = 5.0 mA) 0.2 0.6 C B (I = 10 mA, I = See Note 1) 0.3 0.6 C B Base Emitter Saturation Voltage V 0.7 V BE(sat) (I = 10 mA, I = 0.5 mA) C B Base Emitter On Voltage V V BE(on) (I = 2.0 mA, V = 5.0 V) 0.55 0.7 C CE (I = 10 mA, V = 5.0 V) 0.77 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) BC546 150 300 C CE BC547 150 300 BC548 150 300 Output Capacitance C 1.7 4.5 pF obo (V = 10 V, I = 0, f = 1.0 MHz) CB C Input Capacitance C 10 pF ibo (V = 0.5 V, I = 0, f = 1.0 MHz) EB C Small Signal Current Gain h fe (I = 2.0 mA, V = 5.0 V, f = 1.0 kHz) BC546 125 500 C CE BC547/548 125 900 BC547A 125 220 260 BC546B/547B/548B 240 330 500 BC547C/548C 450 600 900 Noise Figure (I = 0.2 mA, V = 5.0 V, R = 2 k , f = 1.0 kHz, f = 200 Hz) NF dB C CE S 2.0 10 BC546 BC547 2.0 10 BC548 2.0 10 1. I is value for which I = 11 mA at V = 1.0 V. B C CE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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