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Emitter Absolute Maximum Ratings* T =25C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 45 V CER V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 5 V EBO I Collector Current - Continuous 800 mA C T , T Operating and Storage Junction Temperature Range - 55 ~ +150 C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics V Collector-Base Breakdown Voltage I = 100 A, I = 0 60 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10 A, I = 0 5 V (BR)EBO E C I Collector Cutoff Current V = 45V, V = 0 50 nA CES CE BE I Emitter Cutoff Current V = 4.0V, I = 0 50 nA EBO EB C On Characteristics h DC Current Gain I = 150mA, V = 10V 1000 FE C CE I = 500mA, V = 10V 2000 C CE V (sat) Collector-Emitter Saturation Voltage I = 500mA, I = 0.5mA 1.3 V CE C B V (sat) Base-Emitter Saturation Voltage I = 500mA, I = 0.5mA 1.9 V BE C B Thermal Characteristics T =25C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 1000 mW D Derate above 25C 8.0 mW/C R Thermal Resistance, Junction to Ambient 125 C/W JA 2004 Fairchild Semiconductor Corporation Rev. A, May 2004