BSR16
BSR16
PNP General Purpose Amplifier
This device designed for use as general purpose amplifier and
3
switches requiring collector currents to 500mA.
Sourced from Process 63.
See BCW68G for Characteristics.
2
SOT-23
1
Mark: T8
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings*
T =25C unless otherwise noted
a
Symbol Parameter Value Units
V Collector-Emitter Voltage -60 V
CEO
V Collector-Base Voltage -60 V
CBO
V Emitter-Base Voltage -5.0 V
EBO
I Collector Current - Continuous -800 mA
C
T , T Operating and Storage Junction Temperature Range -55 ~ +150 C
J ST
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2002 Fairchild Semiconductor Corporation Rev. A, July 2002BSR16
Electrical Characteristics T =25C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BV Collector-Emitter Breakdown Voltage I = -10mA, I = 0 -60 V
(BR)CEO C B
BV Collector-Base Breakdown Voltage I = -100 A, I = 0 -60 V
(BR)CBO C E
BV Emitter-Base Breakdown Voltage I = -10 A, I = 0 -5.0 V
(BR)EBO E C
I Collector Cut-off Current V = -50V -10 nA
CBO CB
V = -50V, T = 150C -10 A
CB A
I Collector Cut-off Current V = -30V, V = -0.5V -50 nA
CEX CE EB
I Reverse Base Current V = -30V, V = -3.0V -50 nA
BEX CE EB
On Characteristics
h DC Current Gain I = -0.1mA, V = -10V 75
FE C CE
I = -1.0mA, V = -10V 100
C CE
I = -10mA, V = -10V 100
C CE
I = -150mA, V = -10V 100 300
C CE
I = -500mA, V = -10V 50
C CE
V (sat) Collector-Emitter Saturation Voltage I = -150mA, I = -15mA -0.4 V
CE C B
I = -500mA, I = -50mA -1.6 V
C B
V (sat) Base-Emitter Saturation Voltage I = -150mA, I = -15mA -1.3 V
BE C B
I = -500mA, I = -50mA -2.6 V
C B
Small Signal Characteristics
f Current Gain Bandwidth Product I = -50mA, V = -20V, 200 MHz
T C CE
f = 100MHz, T = 25C
A
C Output Capacitance V = -10V, I = 0, f = 1.0MHz 8.0 pF
cb CB E
C Emitter-Base Capacitance V = -2.0V, I = 0, f = 1.0MHz 30 pF
eb CB E
Switching Characteristics
t Turn-On Time V = -30V, I = -150mA, 45 ns
on CC C
I = -15mA
t Delay Time B1 10 ns
d
t Rise Time 40 ns
r
t Turn-Off Time V = -30V, I = -150mA, 100 ns
off CC C
I = I = -15mA
t Storage Time B1 B2 80 ns
s
t Fall Time 30 ns
f
Thermal Characteristics T =25C unless otherwise noted
A
Symbol Parameter Max. Units
P Total Device Dissipation 350 mW
D
Derate above 25C 2.8 mW/C
R Thermal Resistance, Junction to Ambient 357 C/W
JA
* Device mounted on FR-4 PCB 40mm 40mm 1.5mm
2002 Fairchild Semiconductor Corporation Rev. A, July 2002